Micron technology, inc. (20240203502). BITLINE VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE simplified abstract
Contents
- 1 BITLINE VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BITLINE VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Bitline Voltage Adjustment in Memory Devices
- 1.13 Original Abstract Submitted
BITLINE VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE
Organization Name
Inventor(s)
Yu-Chung Lien of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
BITLINE VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203502 titled 'BITLINE VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE
Simplified Explanation
The patent application describes a method to adjust the bitline voltage in memory devices to perform program operations on memory cells.
- Adjust bitline voltage based on the number of program erase cycles associated with the memory device.
- If at least one memory cell is non-programmable, determine a bitline voltage adjustment value.
- Perform program operations on memory cells using the adjusted bitline voltage.
Key Features and Innovation
- Determining bitline voltage adjustment based on the number of program erase cycles.
- Adjusting default bitline voltage to generate an adjusted bitline voltage.
- Enhancing the performance of program operations on memory cells.
Potential Applications
- Memory devices in electronic devices.
- Data storage systems.
- Embedded systems.
Problems Solved
- Improving the reliability of program operations.
- Enhancing the functionality of memory devices.
- Addressing issues with non-programmable memory cells.
Benefits
- Increased efficiency in program operations.
- Extended lifespan of memory devices.
- Enhanced data retention capabilities.
Commercial Applications
Bitline Voltage Adjustment in Memory Devices for Improved Performance
This technology can be utilized in various memory devices to enhance their performance and reliability. It can be beneficial for companies manufacturing electronic devices, data storage systems, and embedded systems looking to improve the functionality of their products.
Prior Art
Research on memory device optimization and program operation efficiency can provide insights into similar technologies and approaches in the field.
Frequently Updated Research
Stay updated on advancements in memory device technology, program operations, and bitline voltage adjustments to ensure the implementation of the latest innovations in the industry.
Questions about Bitline Voltage Adjustment in Memory Devices
What are the key factors influencing bitline voltage adjustment in memory devices?
The key factors include the number of program erase cycles, the presence of non-programmable memory cells, and the desired performance of the memory device.
How does adjusting the bitline voltage impact the overall performance of memory devices?
Adjusting the bitline voltage can improve the efficiency and reliability of program operations, leading to enhanced functionality and longevity of memory devices.
Original Abstract Submitted
a request to perform a program operation on a set of vertically stacked memory cells of a memory device is received. a bitline voltage adjustment value based on a number of program erase cycles (pecs) associated with the memory device is determined responsive to determining that at least one memory cell of the set of vertically stacked memory cells is non-programmable. a default bitline voltage is adjusted by the bitline voltage adjustment value to generate an adjusted bitline voltage. the program operation on the set of vertically stacked memory cells is performed using the adjusted bitline voltage.
