Micron technology, inc. (20240203490). CURRENT REFERENCES FOR MEMORY CELLS simplified abstract
Contents
CURRENT REFERENCES FOR MEMORY CELLS
Organization Name
Inventor(s)
Ferdinando Bedeschi of Biassono (IT)
Pierguido Garofalo of San Donato (IT)
Umberto Di Vincenzo of San Gervasio (IT)
Claudia Palattella of Cologno Monzese (IT)
CURRENT REFERENCES FOR MEMORY CELLS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203490 titled 'CURRENT REFERENCES FOR MEMORY CELLS
Simplified Explanation: The patent application discusses memory devices with memory arrays of resistive memory cells, controlled by access line biasing circuits and sense circuits during different phases of operation.
- Memory devices with memory arrays of resistive memory cells
- Access line biasing circuits provide clamp current to memory cells
- Sense circuits coupled to digit lines in the memory array
- Operation in digit line precharge phase and access line biasing phase
- Set of switches control activities for memory cells, sense circuits, and access line biasing circuits
- Reference current provided from access line biasing circuit to sense circuit
Key Features and Innovation:
- Utilization of resistive memory cells in memory devices
- Efficient control of memory cell activities using access line biasing circuits and sense circuits
- Precise provision of reference current for accurate sensing operations
Potential Applications:
- Non-volatile memory systems
- Embedded memory in integrated circuits
- Storage in consumer electronics devices
Problems Solved:
- Efficient control of memory cell operations
- Accurate sensing of data stored in memory cells
- Improved reliability and performance of memory devices
Benefits:
- Enhanced memory device efficiency
- Increased data storage reliability
- Improved overall performance of memory systems
Commercial Applications: Memory devices with advanced control mechanisms can be utilized in various industries such as semiconductor manufacturing, consumer electronics, and data storage solutions, enhancing the efficiency and reliability of memory systems.
Questions about Memory Devices with Resistive Memory Cells 1. How do access line biasing circuits contribute to the operation of memory cells in the memory array? 2. What are the potential advantages of using resistive memory cells in memory devices?
Frequently Updated Research: Ongoing research in the field of resistive memory technology focuses on improving the scalability and endurance of memory devices, as well as exploring new materials and structures for enhanced performance.
Original Abstract Submitted
a variety of applications can include one or more memory devices having one or more memory arrays of memory cells, where each memory cell is a resistive memory cell arranged such that a clamp current for the memory cell can be provided by an access line biasing circuit to the memory cell opposite a coupling of a sense circuit to a digit line to the memory array. the access line biasing circuit and the sense circuit can be operated in a digit line precharge phase and an access line biasing phase of a memory cell of the memory array using a set of switches to control activities for the memory cell in the memory array, the sense circuit, and the access line biasing circuit. a reference current can be provided from the access line biasing circuit to the sense circuit. additional devices, systems, and methods are discussed.
