Micron technology, inc. (20240203468). ADAPTIVE WRITE OPERATIONS FOR A MEMORY DEVICE simplified abstract
Contents
- 1 ADAPTIVE WRITE OPERATIONS FOR A MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ADAPTIVE WRITE OPERATIONS FOR A MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Adaptive Write Operations
- 1.13 Original Abstract Submitted
ADAPTIVE WRITE OPERATIONS FOR A MEMORY DEVICE
Organization Name
Inventor(s)
Mattia Boniardi of Cormano (IT)
Richard K. Dodge of Santa Clara CA (US)
Innocenzo Tortorelli of Cernusco Sul Naviglio (IT)
Mattia Robustelli of Milano (MI) (IT)
ADAPTIVE WRITE OPERATIONS FOR A MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203468 titled 'ADAPTIVE WRITE OPERATIONS FOR A MEMORY DEVICE
Simplified Explanation
The patent application describes methods, systems, and devices for adaptive write operations in a memory device. These techniques involve adjusting parameters for write operations based on the number of access operations performed on the memory array, compensating for changes in memory material properties over time.
- Identifying the quantity of access operations on a memory array
- Modifying write operation parameters based on the identified access operations
- Writing logic states to the memory array using the modified parameters
- Compensating for changes in memory material properties due to aging or degradation
Key Features and Innovation
- Adaptive write operations based on access operation quantity
- Compensation for changes in memory material properties over time
- Writing logic states to memory array with modified parameters
Potential Applications
- Memory devices
- Data storage systems
- Embedded systems
Problems Solved
- Addressing changes in memory material properties over time
- Enhancing the reliability and longevity of memory devices
Benefits
- Improved performance and reliability of memory devices
- Extended lifespan of memory arrays
- Enhanced data storage capabilities
Commercial Applications
Memory device manufacturers can utilize these techniques to create more reliable and long-lasting products, catering to various industries such as data storage, embedded systems, and consumer electronics.
Prior Art
Readers can explore prior research on adaptive write operations in memory devices, material properties of memory elements, and techniques for compensating for memory degradation over time.
Frequently Updated Research
Researchers are constantly exploring new methods to improve memory device performance, reliability, and longevity. Stay updated on the latest advancements in memory technology.
Questions about Adaptive Write Operations
How do adaptive write operations improve memory device performance?
Adaptive write operations adjust parameters based on access operations, optimizing write processes for better efficiency and reliability.
What are the potential long-term benefits of compensating for memory material changes over time?
Compensating for memory material changes can extend the lifespan of memory devices and enhance data storage capabilities.
Original Abstract Submitted
methods, systems, and devices for adaptive write operations for a memory device are described. in an example, the described techniques may include identifying a quantity of access operations performed on a memory array, modifying one or more parameters for a write operation based on the identified quantity of access operations, and writing logic states to the memory array by performing the write operation according to the one or more modified parameters. in some examples, the memory array may include memory cells associated with a configurable material element, such as a chalcogenide material, that stores a logic state based on a material property of the material element. in some examples, the described techniques may at least partially compensate for a change in memory material properties due to aging or other degradation or changes over time (e.g., due to accumulated access operations).
