Micron technology, inc. (20240203462). DEVICES AND METHODS FOR A FINFET SENSE AMPLIFIER simplified abstract
Contents
DEVICES AND METHODS FOR A FINFET SENSE AMPLIFIER
Organization Name
Inventor(s)
Christopher G. Wieduwilt of Boise ID (US)
DEVICES AND METHODS FOR A FINFET SENSE AMPLIFIER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203462 titled 'DEVICES AND METHODS FOR A FINFET SENSE AMPLIFIER
Simplified Explanation: The patent application describes systems and methods for fabricating devices with various fin widths in a sense amplifier of a memory device to improve performance.
Key Features and Innovation:
- Fabricating various fin widths in the sense amplifier devices improves memory device performance.
- Thicker fins for NMOS and PMOS sense amplifiers reduce threshold voltage variations.
- Thinner fins for control devices maintain high performance.
Potential Applications: This technology can be applied in the semiconductor industry for memory devices to enhance performance and reduce threshold voltage variations.
Problems Solved: The technology addresses issues related to threshold voltage variations in memory devices, improving overall performance and reliability.
Benefits:
- Improved performance of memory devices.
- Reduction in threshold voltage variations.
- Enhanced reliability of memory devices.
Commercial Applications: The technology can be utilized in the production of memory devices for various electronic applications, potentially leading to more efficient and reliable products in the market.
Questions about the Technology: 1. How does varying fin widths in the sense amplifier devices impact memory device performance? 2. What are the specific advantages of using thicker fins for NMOS and PMOS sense amplifiers in memory devices?
Frequently Updated Research: Ongoing research in semiconductor fabrication techniques and memory device design may further enhance the performance and efficiency of devices utilizing varied fin widths in sense amplifiers.
Original Abstract Submitted
systems and methods for fabricating various devices with various fin widths in a sense amplifier (sa) of a memory device is described. the various devices in the sa are sensitive to various parameters, which are sensitive to the fin widths of corresponding finfets. fabricating various fin widths in the various devices in the sa improves the performance of the memory device. for instance, using thicker fins (greater fin widths) for nmos sense amplifiers and pmos sense amplifiers in the sa reduces threshold voltage variations while using thinner fins (smaller fin widths) for control devices in the sa keeps high performance for the control devices.
