Micron technology, inc. (20240201878). ROW ADDRESS LATCHING FOR MULTIPLE ACTIVATE COMMAND PROTOCOL simplified abstract
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ROW ADDRESS LATCHING FOR MULTIPLE ACTIVATE COMMAND PROTOCOL
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ROW ADDRESS LATCHING FOR MULTIPLE ACTIVATE COMMAND PROTOCOL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240201878 titled 'ROW ADDRESS LATCHING FOR MULTIPLE ACTIVATE COMMAND PROTOCOL
Simplified Explanation: The patent application describes methods, systems, and devices for row address latching for a multiple activate command protocol in a memory device.
Key Features and Innovation:
- Memory device receives first and second activate commands indicating different sets of row address bits.
- The device stores and delays the row address bits to activate a page of memory efficiently.
Potential Applications: This technology can be applied in various memory devices such as RAM, SSDs, and other storage systems where efficient row address latching is crucial.
Problems Solved: The technology addresses the need for faster and more precise row address activation in memory devices, improving overall performance and data access speeds.
Benefits:
- Enhanced memory access speed and efficiency.
- Improved data processing capabilities.
- Reduced latency in memory operations.
Commercial Applications: The technology can be utilized in data centers, servers, consumer electronics, and any other devices requiring high-speed memory access for improved performance.
Prior Art: Readers can explore prior patents related to memory access protocols, row address latching, and memory device optimization to understand the evolution of this technology.
Frequently Updated Research: Stay updated on advancements in memory device technology, semiconductor manufacturing, and data storage solutions to see how this innovation continues to evolve.
Questions about Row Address Latching: 1. How does row address latching impact memory access speed? 2. What are the key differences between traditional memory access protocols and the multiple activate command protocol described in the patent application?
Original Abstract Submitted
methods, systems, and devices for row address latching for multiple activate command protocol are described. a memory device may receive a first activate command that indicates a first set of bits of a row address and may store the first set of bits to obtain a first delayed signal of the first set of bits. the memory device may receive a second activate command that indicates a second set of bits of the row address and may store the second set of bits to obtain a first delayed signal of the second set of bits. the memory device may store the first delayed signal of the first set of bits to obtain a second delayed signal of the first set of bits and may activate a page of memory addressed according to the second delayed signal and the first delayed signal of the second set of bits.
