Micron technology, inc. (20240196765). MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS simplified abstract
Contents
- 1 MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Commercial Applications
- 1.9 Prior Art
- 1.10 Frequently Updated Research
- 1.11 Questions about Memory Devices with Laterally Formed Memory Cells
- 1.12 Original Abstract Submitted
MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS
Organization Name
Inventor(s)
Thomas M. Graettinger of Boise ID (US)
Lorenzo Fratin of Buccinasco (IT)
Patrick M. Flynn of Boise ID (US)
Paolo Fantini of Vimercate (IT)
MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240196765 titled 'MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS
Simplified Explanation
The patent application describes methods, systems, and devices for a memory device with laterally formed memory cells. It involves forming a material stack with a conductive layer and multiple dielectric layers to create a channel in the sidewall. The channel is filled with materials, and an opening is formed to replace a portion of the material with a chalcogenide material.
- A material stack is formed with a conductive layer and dielectric layers.
- The stack creates a channel in the sidewall, filled with materials.
- An opening is formed to replace a portion of the material with a chalcogenide material.
Potential Applications
This technology could be applied in the development of advanced memory devices, such as non-volatile memory and storage solutions. It may also find use in the semiconductor industry for enhancing memory cell performance and density.
Problems Solved
This innovation addresses the need for more efficient and compact memory devices. By utilizing laterally formed memory cells, it offers improved performance and storage capabilities in a smaller footprint.
Benefits
The benefits of this technology include increased memory cell density, enhanced performance, and potentially lower power consumption in memory devices. It also allows for more efficient use of space in semiconductor applications.
Commercial Applications
- Title: Advanced Memory Devices with Laterally Formed Memory Cells
- This technology could be utilized in the production of next-generation memory devices for consumer electronics, data centers, and other computing applications. It has the potential to revolutionize the memory storage industry by offering higher capacity and faster data access.
Prior Art
Readers interested in exploring prior art related to this technology may start by researching patents and publications in the field of semiconductor memory devices, particularly those focusing on memory cell structures and materials.
Frequently Updated Research
Researchers in the field of semiconductor memory devices are constantly exploring new materials and structures to improve memory performance and efficiency. Stay updated on the latest advancements in memory technology to understand the evolving landscape of memory devices.
Questions about Memory Devices with Laterally Formed Memory Cells
What are the key advantages of laterally formed memory cells compared to traditional memory cell structures?
Laterally formed memory cells offer higher density and improved performance due to their unique structure, allowing for more efficient use of space and enhanced data storage capabilities.
How does the use of chalcogenide materials in memory devices impact their overall performance and reliability?
Chalcogenide materials have been known to exhibit fast switching speeds and low power consumption, making them ideal for use in memory devices to enhance performance and reliability.
Original Abstract Submitted
methods, systems, and devices for a memory device with laterally formed memory cells are described. a material stack that includes a conductive layer between multiple dielectric layers may be formed, where the conductive layer and dielectric layers may form a channel in a sidewall of the material stack. the channel may be filled with one or more materials, where a first side of an outermost material of the one or more materials may be exposed. an opening may be formed in the material stack that exposes a second side of at least one material of the one or more materials. the opening may be used to replace a portion of the at least one material with a chalcogenide material where the electrode materials may be formed before replacing the portion of the at least one material with the chalcogenide material.
