Micron technology, inc. (20240196606). MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract

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MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS

Organization Name

micron technology, inc.

Inventor(s)

Lifang Xu of Boise ID (US)

Harsh Narendrakumar Jain of Boise ID (US)

Indra V. Chary of Boise ID (US)

Richard J. Hill of Boise ID (US)

MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240196606 titled 'MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS

Simplified Explanation

The microelectronic device described in the patent application consists of a stack structure with blocks, dielectric slot structures, and a further dielectric slot structure. The stack structure includes alternating layers of conductive and insulative structures, with each block having a stadium structure and crest regions. The dielectric slot structures extend across the crest regions and into the stadium structure, while the further dielectric slot structure extends across the crest regions and intersects with the other slot structures.

  • The microelectronic device features a unique stack structure with alternating conductive and insulative layers.
  • Blocks within the stack structure have stadium structures and crest regions.
  • Dielectric slot structures extend across crest regions and into the stadium structure.
  • The further dielectric slot structure intersects with other slot structures and extends through the tiers.

Potential Applications

This technology could be applied in the development of advanced microelectronic devices, such as integrated circuits, sensors, and memory devices.

Problems Solved

This innovation addresses the need for improved performance and efficiency in microelectronic devices by optimizing the stack structure for enhanced functionality.

Benefits

- Enhanced performance and efficiency in microelectronic devices - Improved functionality and reliability - Potential for miniaturization and increased integration

Commercial Applications

The technology could have significant commercial applications in the semiconductor industry for the production of high-performance microelectronic devices, leading to advancements in various electronic products.

Prior Art

Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of microelectronics, specifically focusing on stack structures and dielectric slot configurations.

Frequently Updated Research

Researchers in the field of microelectronics are constantly exploring new materials and designs to enhance the performance of microelectronic devices. Stay updated on the latest advancements in stack structures and dielectric slot configurations for cutting-edge developments in the industry.

Questions about Microelectronic Device Innovation

What are the potential applications of this technology in the semiconductor industry?

The technology could be utilized in the development of integrated circuits, sensors, and memory devices for improved performance and efficiency.

How does this innovation address the need for enhanced functionality in microelectronic devices?

By optimizing the stack structure with unique dielectric slot configurations, the technology improves performance and reliability in microelectronic devices.


Original Abstract Submitted

a microelectronic device includes a stack structure comprising blocks, additional dielectric slot structures, and a further dielectric slot structure. the stack structure includes alternating tiers of conductive and insulative structures. a block comprises a stadium structure and crest regions. the stadium structure includes staircase structures having steps comprising edges of the tiers. the additional dielectric slot structures individually extend in the first direction across a first of the crest regions and at least partially into the stadium structure. the additional dielectric slot structures are separated from one another in a second direction orthogonal to the first direction and individually vertically extend through the tiers. the further dielectric slot structure extends in the second direction across a second of the crest regions. the further dielectric slot structure intersects at least one of the additional dielectric slot structures and vertically extend through the tiers.