Micron technology, inc. (20240196604). MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL simplified abstract
Contents
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL
Organization Name
Inventor(s)
Srinivas Pulugurtha of Boise ID (US)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240196604 titled 'MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL
The patent application describes an apparatus with a memory cell, data lines, and access lines for data storage and retrieval purposes.
- The apparatus includes a memory cell with a charge storage structure and two transistors for data manipulation.
- Three data lines extend in one direction and are connected to the transistors for data transfer.
- Two access lines extend in another direction and are separated from the transistors by dielectric layers.
- The charge storage structure is positioned between the two levels of the apparatus where the access lines are located.
Potential Applications: This technology could be used in electronic devices such as smartphones, tablets, and computers for efficient data storage and retrieval.
Problems Solved: The technology addresses the need for compact and high-performance memory cells in electronic devices.
Benefits: The benefits of this technology include faster data access, increased storage capacity, and improved overall device performance.
Commercial Applications: This technology could be valuable for semiconductor manufacturers, electronics companies, and data storage providers looking to enhance their products' memory capabilities.
Prior Art: Readers can explore prior patents related to memory cell structures, data line configurations, and transistor designs in semiconductor devices.
Frequently Updated Research: Stay informed about the latest advancements in memory cell technology, semiconductor manufacturing processes, and data storage innovations relevant to this patent application.
Questions about the Technology: 1. How does this memory cell technology compare to existing data storage solutions? 2. What potential challenges could arise in implementing this technology in mass-produced electronic devices?
Original Abstract Submitted
some embodiments include apparatuses and methods of forming the apparatuses. one of the apparatuses includes a memory cell, first, second, and third data lines, and first and second access lines. each of the first, second, and third data lines includes a length extending in a first direction. each of the first and second access lines includes a length extending in a second direction. the memory cell includes a first transistor including a charge storage structure, and a first channel region electrically separated from the charge storage structure, and a second transistor including a second channel region electrically coupled to the charge storage structure. the first data line is electrically coupled to the first channel region. the second data line is electrically coupled to the first channel region. the third data line is electrically coupled to the second channel region, the second channel region being between the charge storage structure and the third data line. the first access line is located on a first level of the apparatus and separated from the first channel by a first dielectric. the second access line is located on a second level of the apparatus and separated from the second channel by a second dielectric. the charge storage structure is located on a level of the apparatus between the first and second levels.
