Micron technology, inc. (20240194284). METHODS AND SYSTEMS FOR IMPROVING ECC OPERATION OF MEMORIES simplified abstract
Contents
METHODS AND SYSTEMS FOR IMPROVING ECC OPERATION OF MEMORIES
Organization Name
Inventor(s)
Christophe Laurent of Agrate Brianza (IT)
Riccardo Muzzetto of Arcore (IT)
METHODS AND SYSTEMS FOR IMPROVING ECC OPERATION OF MEMORIES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194284 titled 'METHODS AND SYSTEMS FOR IMPROVING ECC OPERATION OF MEMORIES
The present disclosure pertains to a method for operating an array of memory cells, involving storing user data in multiple memory cells, storing associated parity data in parity cells, selecting the number of used parity cells based on the status of memory cells and error correction code (ECC) correction capability, and performing an ECC operation on the memory cells based on the selected number of used parity cells.
- Storing user data in memory cells
- Storing parity data in parity cells
- Selecting the number of used parity cells based on memory cell status and ECC correction capability
- Performing ECC operation on memory cells based on selected number of used parity cells
Potential Applications: - Data storage systems - Error correction in memory arrays - Information security systems
Problems Solved: - Efficient error correction in memory arrays - Enhanced data reliability - Optimal memory cell utilization
Benefits: - Improved data integrity - Enhanced error correction capabilities - Efficient memory management
Commercial Applications: Title: "Enhanced Error Correction Method for Memory Arrays" This technology can be utilized in: - Data centers - Cloud storage services - Consumer electronics industry
Questions about the technology: 1. How does the method optimize memory cell utilization? 2. What are the implications of selecting the number of used parity cells based on ECC correction capability?
Original Abstract Submitted
the present disclosure relates to a method for operating an array of memory cells, the method comprising the steps of storing user data in a plurality of memory cells of the memory array, storing parity data associated with the user data in parity cells of the memory array, wherein a number of used parity cells is selected based on a status of the memory cells and is related to a selected error correction code (ecc) correction capability, and performing an ecc operation on the plurality of memory cells, the ecc correction capability being based on the selected number of used parity cells. related memory devices and systems are also herein disclosed.
