Micron technology, inc. (20240194272). METHOD AND SYSTEM FOR ACCESSING MEMORY CELLS simplified abstract
Contents
- 1 METHOD AND SYSTEM FOR ACCESSING MEMORY CELLS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD AND SYSTEM FOR ACCESSING MEMORY CELLS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Memory Cell Access Technology
- 1.13 Original Abstract Submitted
METHOD AND SYSTEM FOR ACCESSING MEMORY CELLS
Organization Name
Inventor(s)
Ferdinando Bedeschi of Biassono (IT)
Riccardo Muzzetto of Arcore (IT)
Umberto Di Vincenzo of Capriate San Gervasio (IT)
METHOD AND SYSTEM FOR ACCESSING MEMORY CELLS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194272 titled 'METHOD AND SYSTEM FOR ACCESSING MEMORY CELLS
Simplified Explanation
The patent application describes a method for accessing memory cells by applying different read voltages and determining the logic value of the memory cells based on their response to these voltages.
- Applying an increasing read voltage with a first polarity to the memory cells.
- Counting the number of switched memory cells based on the applied read voltage.
- Applying a first read voltage with the first polarity based on the number of switched memory cells reaching a threshold.
- Applying a second read voltage with a second polarity opposite to the first.
- Determining the logic value of the memory cell based on its response to the read voltages.
Key Features and Innovation
- Method for accessing memory cells using varying read voltages. - Ability to determine the logic value of memory cells based on their response to different voltages. - Efficient way to read data from memory cells.
Potential Applications
This technology can be applied in: - Solid-state drives - Non-volatile memory systems - Embedded systems
Problems Solved
- Efficient reading of data from memory cells. - Accurate determination of logic values in memory cells.
Benefits
- Improved data retrieval from memory cells. - Enhanced reliability in reading data. - Cost-effective method for accessing memory cells.
Commercial Applications
Title: Advanced Memory Cell Reading Technology for Enhanced Data Retrieval This technology can be utilized in various industries such as: - Data storage - Semiconductor manufacturing - Consumer electronics
Prior Art
Prior research in the field of memory cell access methods and voltage-based logic value determination can provide valuable insights into the development of this technology.
Frequently Updated Research
Stay updated on the latest advancements in memory cell access methods and voltage-based logic value determination to enhance the efficiency and accuracy of data retrieval processes.
Questions about Memory Cell Access Technology
How does this method improve data retrieval efficiency compared to traditional methods?
This method allows for a more precise determination of logic values in memory cells, leading to enhanced data retrieval accuracy.
What are the potential cost-saving benefits of implementing this technology in memory systems?
Implementing this technology can lead to cost savings in data storage systems by improving the efficiency of data retrieval processes.
Original Abstract Submitted
the present disclosure relates to a method for accessing memory cells comprising: applying an increasing read voltage with a first polarity to the plurality of memory cells; counting a number of switching memory cells in the plurality based on the applying the increasing read voltage; applying a first read voltage with the first polarity based on the number of switched memory cells reaching a threshold number; applying a second read voltage with a second polarity opposite to the first polarity; and determining that a memory cell in the plurality of memory cells has a first logic value based on the memory cell having switched during one of the applying the increasing read voltage and the applying the first read voltage or based on the memory cell not having switched during the applying the second read voltage. a related system is also disclosed.
