Micron technology, inc. (20240194270). DEBIASING SCHEME FOR PARTIAL BLOCK ERASE BASED ON WORD LINE GROUPS simplified abstract
Contents
- 1 DEBIASING SCHEME FOR PARTIAL BLOCK ERASE BASED ON WORD LINE GROUPS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DEBIASING SCHEME FOR PARTIAL BLOCK ERASE BASED ON WORD LINE GROUPS - A simplified explanation of the abstract
- 1.4 Potential Applications
- 1.5 Problems Solved
- 1.6 Benefits
- 1.7 Commercial Applications
- 1.8 Prior Art
- 1.9 Frequently Updated Research
- 1.10 Questions about Memory Cell Management
- 1.11 Original Abstract Submitted
DEBIASING SCHEME FOR PARTIAL BLOCK ERASE BASED ON WORD LINE GROUPS
Organization Name
Inventor(s)
Pitamber Shukla of Boise ID (US)
Jose Nino N. Monje of Boise ID (US)
DEBIASING SCHEME FOR PARTIAL BLOCK ERASE BASED ON WORD LINE GROUPS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194270 titled 'DEBIASING SCHEME FOR PARTIAL BLOCK ERASE BASED ON WORD LINE GROUPS
The method described in the patent application involves identifying two groups of word lines associated with a block of memory cells - one group in a programmed state and the other in an unprogrammed state. Based on this determination, different debiasing voltages are applied to each group of word lines.
- The innovation involves applying specific debiasing voltages to different groups of word lines based on their programmed or unprogrammed state.
- This method helps in efficiently managing the memory cells and optimizing their performance.
- By applying tailored debiasing voltages, the method ensures that the memory cells operate effectively and reliably.
Potential Applications
This technology can be applied in various memory storage devices such as flash memory, solid-state drives, and other non-volatile memory systems.
Problems Solved
This method addresses the challenge of managing memory cells efficiently and ensuring their reliable performance by applying appropriate debiasing voltages.
Benefits
- Improved performance and reliability of memory cells
- Efficient management of memory storage devices
- Enhanced overall functionality of non-volatile memory systems
Commercial Applications
The technology can be utilized in the development of high-performance memory storage devices for consumer electronics, data centers, and other computing applications.
Prior Art
Readers can explore prior research on memory cell management, debiasing techniques, and optimization methods in non-volatile memory systems to gain a deeper understanding of the field.
Frequently Updated Research
Researchers are continuously exploring new methods to enhance the performance and efficiency of memory storage devices, including advancements in debiasing techniques and memory cell management.
Questions about Memory Cell Management
How does applying different debiasing voltages to programmed and unprogrammed word lines impact memory cell performance?
By applying tailored debiasing voltages, the method ensures optimized performance and reliability of memory cells based on their programmed state.
What are the potential implications of this technology on the future development of memory storage devices?
This technology could lead to the creation of more efficient and reliable memory storage devices for a wide range of applications, enhancing overall performance and functionality.
Original Abstract Submitted
a method includes determining that a first group of word lines associated with a block of memory cells are in a programmed state and determining that a second group of word lines associated with the block of memory cells are in an unprogrammed state. the method further includes applying a first debiasing voltage to the first group of word lines based on the determination that the first group of word lines are in the programmed state and applying a second debiasing voltage to the second group of word lines based on the determination that the second group of word lines are in the unprogrammed state.
