Micron technology, inc. (20240194251). LOCAL DIGIT LINE (LDL) COUPLING CANCELLATION simplified abstract
Contents
- 1 LOCAL DIGIT LINE (LDL) COUPLING CANCELLATION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LOCAL DIGIT LINE (LDL) COUPLING CANCELLATION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Commercial Applications
- 1.9 Prior Art
- 1.10 Frequently Updated Research
- 1.11 Questions about Memory Device Operation
- 1.12 Original Abstract Submitted
LOCAL DIGIT LINE (LDL) COUPLING CANCELLATION
Organization Name
Inventor(s)
Richard E. Fackenthal of Carmichael CA (US)
Christopher K. Morzano of Boise ID (US)
Daniele Vimercati of El Dorado Hills CA (US)
LOCAL DIGIT LINE (LDL) COUPLING CANCELLATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194251 titled 'LOCAL DIGIT LINE (LDL) COUPLING CANCELLATION
Simplified Explanation
The patent application describes devices and methods for operating a memory device with multiple memory cells and global digit lines to carry data. It includes local digit lines to transfer data between the global digit lines and memory cells, along with digit line selection circuits to connect selected local digit lines to the global digit lines. A controller is used to cancel capacitive coupling between selected local digit lines.
- Multiple memory cells configured to store data
- Global digit lines for memory accesses
- Local digit lines for data transfer
- Digit line selection circuits for connecting local and global digit lines
- Controller to cancel capacitive coupling between selected local digit lines
Potential Applications
This technology can be applied in various memory devices such as solid-state drives, computer memory modules, and embedded systems where efficient data transfer and storage are crucial.
Problems Solved
The technology addresses issues related to capacitive coupling between local digit lines, which can lead to data corruption and interference in memory operations.
Benefits
- Improved data transfer efficiency - Enhanced memory access speed - Reduced data corruption risks
Commercial Applications
The technology can be utilized in the development of faster and more reliable memory devices for consumer electronics, data centers, and industrial applications, enhancing overall performance and reliability.
Prior Art
Readers can explore prior research on memory device architectures, digit line selection techniques, and capacitive coupling mitigation strategies in the field of semiconductor memory technologies.
Frequently Updated Research
Researchers are constantly exploring new methods to optimize memory device performance, reduce power consumption, and enhance data integrity in various applications.
Questions about Memory Device Operation
How does the controller cancel capacitive coupling between local digit lines?
The controller selectively activates digit line selection circuits to connect specific local digit lines to the global digit lines, effectively canceling capacitive coupling.
What are the potential challenges in implementing this technology in high-density memory devices?
Implementing this technology in high-density memory devices may face challenges related to signal interference, power consumption, and scalability, requiring careful design considerations and optimization strategies.
Original Abstract Submitted
devices and methods for operating a memory device including multiple memory cells configured to store data and multiple global digit lines configured to carry the data in memory accesses of the memory cells. the memory device also includes multiple local digit lines configured to carry the data between the global digit lines and the memory cells. the memory device further includes multiple digit line selection circuits configured to selectively couple selected local digit lines of the local digit lines to the global digit lines. the memory device also includes a controller configured to select a pattern of selected digit line selection circuits to at least partially cancel capacitive coupling between the selected local digit lines.
