Micron technology, inc. (20240188308). MEMORY CELL PROTECTIVE LAYERS IN A THREE-DIMENSIONAL MEMORY ARRAY simplified abstract

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MEMORY CELL PROTECTIVE LAYERS IN A THREE-DIMENSIONAL MEMORY ARRAY

Organization Name

micron technology, inc.

Inventor(s)

Farrell M. Good of Meridian ID (US)

MEMORY CELL PROTECTIVE LAYERS IN A THREE-DIMENSIONAL MEMORY ARRAY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240188308 titled 'MEMORY CELL PROTECTIVE LAYERS IN A THREE-DIMENSIONAL MEMORY ARRAY

Simplified Explanation

The patent application describes methods, systems, and devices for protective layers in memory cells of a three-dimensional memory array to prevent material diffusion.

  • Memory cells in a three-dimensional architecture are separated by dielectric materials.
  • Barrier materials are used to prevent diffusion between memory cells and dielectric materials.
  • The barrier material is placed between the memory cell and dielectric material to reduce or prevent material diffusion.

Key Features and Innovation

  • Three-dimensional memory array with levels of memory cells separated by dielectric materials.
  • Barrier material used to prevent diffusion between memory cells and dielectric materials.

Potential Applications

The technology can be applied in various memory storage devices and systems where preventing material diffusion is crucial.

Problems Solved

The technology addresses the issue of material diffusion between memory cells and dielectric materials in a three-dimensional memory array.

Benefits

  • Enhanced memory cell protection.
  • Improved longevity and reliability of memory storage devices.

Commercial Applications

  • Data centers
  • Consumer electronics
  • Automotive electronics

Prior Art

Information on prior art related to this technology is not provided in the abstract.

Frequently Updated Research

There is no information on frequently updated research related to this technology.

Questions about Memory Cell Protective Layers

Question 1

How does the barrier material prevent material diffusion in memory cells?

The barrier material acts as a protective layer between memory cells and dielectric materials, reducing or preventing material diffusion.

Question 2

What are the potential long-term benefits of using protective layers in memory cells?

The potential long-term benefits include improved reliability and longevity of memory storage devices, ensuring data integrity over time.


Original Abstract Submitted

methods, systems, and devices for memory cell protective layers in a three-dimensional memory array are described. a memory device may support accessing memory cells of a memory array arranged in a three-dimensional architecture. the three-dimensional architecture may include levels of memory cells separated by levels of dielectric materials, such that the memory cells are formed between the dielectric materials. to prevent or reduce diffusion between a given memory cell and the dielectric materials, a barrier material may be formed on the dielectric material before forming the memory cell. the barrier material may be located between the memory cell and dielectric material, which may reduce or prevent material diffusion.