Micron technology, inc. (20240188302). MEMORY DEVICE INCLUDING TIERS OF FeFET MEMORY CELLS AND VERTICAL CONTROL GATES simplified abstract
Contents
MEMORY DEVICE INCLUDING TIERS OF FeFET MEMORY CELLS AND VERTICAL CONTROL GATES
Organization Name
Inventor(s)
Kamal M. Karda of Boise ID (US)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
MEMORY DEVICE INCLUDING TIERS OF FeFET MEMORY CELLS AND VERTICAL CONTROL GATES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240188302 titled 'MEMORY DEVICE INCLUDING TIERS OF FeFET MEMORY CELLS AND VERTICAL CONTROL GATES
The patent application describes an apparatus with multiple components encircling each other, including a conductive structure, a ferroelectric portion, a charge storage structure, a dielectric portion, and a semiconductor portion, with additional conductive structures on opposite sides.
- The apparatus features a unique design with various layers encircling each other.
- The ferroelectric portion and charge storage structure contribute to the functionality of the apparatus.
- The semiconductor portion plays a crucial role in the overall operation of the apparatus.
- The additional conductive structures on the sides enhance the performance of the apparatus.
- The perpendicular orientation of the additional conductive structures adds to the novelty of the design.
Potential Applications: - Memory devices - Sensor technology - Semiconductor industry
Problems Solved: - Enhanced charge storage capabilities - Improved semiconductor functionality - Increased efficiency in electronic devices
Benefits: - Higher performance levels - Improved data storage capacity - Enhanced semiconductor operations
Commercial Applications: Title: Advanced Memory Devices: Commercial Uses and Market Implications Description: This technology can revolutionize memory devices, leading to faster and more efficient electronic products. The market for advanced memory solutions is vast, with potential applications in consumer electronics, data storage, and industrial automation.
Prior Art: No prior art information available at this time.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology and memory devices to leverage the full potential of this innovative apparatus.
Questions about the technology: Question 1: How does the design of this apparatus compare to traditional memory devices? Answer: The design of this apparatus offers unique features such as the ferroelectric portion and charge storage structure, setting it apart from traditional memory devices.
Question 2: What advantages do the additional conductive structures provide in this apparatus? Answer: The additional conductive structures enhance the overall performance and efficiency of the apparatus by optimizing charge flow and conductivity.
Original Abstract Submitted
some embodiments include apparatuses and methods of forming the apparatuses. one of the apparatuses includes a conductive structure; a ferroelectric portion encircling the conductive structure; a charge storage structure encircling the ferroelectric portion; a dielectric portion encircling the charge storage structure; a semiconductor portion encircling the dielectric portion; a first additional conductive structure adjacent a first side of the semiconductor portion; and a second additional conductive structure adjacent a second side of the semiconductor portion, wherein a direction from the first additional conductive structure to the second additional conductive structure is perpendicular to a direction of a length of the conductive structure.
