Micron technology, inc. (20240188280). TWIN CHANNEL ACCESS DEVICE FOR VERTICAL THREE-DIMENSIONAL MEMORY simplified abstract
Contents
TWIN CHANNEL ACCESS DEVICE FOR VERTICAL THREE-DIMENSIONAL MEMORY
Organization Name
Inventor(s)
Kamal M. Karda of Boise ID (US)
Scott E. Sills of Boise ID (US)
TWIN CHANNEL ACCESS DEVICE FOR VERTICAL THREE-DIMENSIONAL MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240188280 titled 'TWIN CHANNEL ACCESS DEVICE FOR VERTICAL THREE-DIMENSIONAL MEMORY
The patent application describes a twin channel access device and twin storage node memory cell in a vertical three-dimensional memory system. The memory cell includes horizontally oriented access devices with multiple source/drain regions and channel regions actuated by gate dielectrics.
- The memory cell features a first source/drain region, a second source/drain region, and a first channel region separated by a first gate dielectric.
- A first gate controls the first channel region, while a second channel region is actuated by a second gate separated by a second gate dielectric.
- The access device includes a third source/drain region and a fourth source/drain region separated by a second channel region.
- A horizontally oriented storage node is coupled to the second and/or fourth source/drain regions of the twin channel access device.
Potential Applications: - High-density memory systems - Data storage in electronic devices - Advanced computing applications
Problems Solved: - Increased memory storage capacity - Enhanced data access speed - Improved efficiency in memory systems
Benefits: - Higher performance in data storage - Compact memory cell design - Improved overall system efficiency
Commercial Applications: Title: "Innovative Memory Technology for Enhanced Data Storage" This technology can be utilized in smartphones, tablets, laptops, servers, and other electronic devices requiring high-speed and high-capacity memory storage.
Prior Art: Research on vertical three-dimensional memory structures and twin channel access devices in memory cells.
Frequently Updated Research: Ongoing studies on optimizing gate dielectrics and channel regions for improved memory cell performance.
Questions about Twin Channel Access Device and Memory Cell Technology:
Question 1: How does the twin channel access device improve memory cell efficiency compared to traditional memory structures? Answer: The twin channel design allows for increased data access speed and storage capacity within a compact memory cell layout.
Question 2: What are the potential challenges in scaling up this technology for mass production in commercial electronic devices? Answer: Challenges may include manufacturing consistency, cost-effectiveness, and integration with existing memory architectures.
Original Abstract Submitted
systems, methods and apparatus are provided for a twin channel access device, twin storage node memory cell in a vertical three-dimensional memory. the memory cell has a horizontally oriented access device having a first source/drain region and a second source/drain region separated by a first channel region. the first channel is actuated by a first gate separated from the first channel region by a first gate dielectric. the access device further includes a third source/drain region and a fourth source/drain region separated by a second channel region. the second channel is actuated by a second gate separated from the second channel region by a second gate dielectric. the first and the second gate are connected. a horizontally oriented storage node is coupled to the second and/or fourth source/drain regions of the twin channel access device.
