Micron technology, inc. (20240188274). MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS AND CHARGE STORAGE STRUCTURE HAVING MULTIPLE PORTIONS simplified abstract

MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS AND CHARGE STORAGE STRUCTURE HAVING MULTIPLE PORTIONS

Organization Name

micron technology, inc.

Inventor(s)

Kamal M. Karda of Boise ID (US)

Durai Vishak Nirmal Ramaswamy of Boise ID (US)

Karthik Sarpatwari of Boise ID (US)

Haitao Liu of Boise ID (US)

MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS AND CHARGE STORAGE STRUCTURE HAVING MULTIPLE PORTIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240188274 titled 'MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS AND CHARGE STORAGE STRUCTURE HAVING MULTIPLE PORTIONS

Simplified Explanation

The patent application describes an apparatus with a memory cell that includes different semiconductor portions on separate levels, connected by a conductive portion and separated by a dielectric material.

• The apparatus includes a first and second conductive structure, a conductive portion, and a memory cell with semiconductor portions on different levels.
• The memory cell has a charge storage structure with multiple portions, separated by a dielectric material.
• The conductive portion is located between the charge storage structure portions and separated from it by a dielectric material.

Key Features and Innovation

• Memory cell with semiconductor portions on different levels.
• Charge storage structure with multiple portions.
• Use of dielectric material to separate semiconductor and charge storage structure portions.

Potential Applications

This technology could be used in memory devices, data storage systems, and semiconductor manufacturing.

Problems Solved

This technology addresses the challenge of efficiently storing and accessing data in memory cells.

Benefits

• Improved data storage efficiency.
• Enhanced semiconductor performance.
• Potential for increased memory capacity.

Commercial Applications

The technology could be applied in the development of advanced memory devices for consumer electronics, data centers, and other high-tech industries.

Prior Art

No specific prior art information is provided in the abstract.

Frequently Updated Research

There is no information on frequently updated research related to this technology.

Questions about the Technology

Question 1

How does the use of different semiconductor portions on separate levels improve memory cell performance?

Answer 1

The use of different semiconductor portions on separate levels allows for more efficient data storage and retrieval processes within the memory cell, enhancing overall performance.

Question 2

What are the potential challenges in implementing this technology in commercial memory devices?

Answer 2

Some potential challenges in implementing this technology in commercial memory devices may include manufacturing complexities, cost considerations, and compatibility with existing systems.

Original Abstract Submitted

some embodiments include apparatuses and methods of using the apparatuses. one of the apparatuses includes a first conductive structure, a second conductive structure, a conductive portion coupled to one of the conductive structures, and a memory cell. the memory cell includes different semiconductor portions located on different levels of the apparatus and separated from each other by a dielectric portion. the first semiconductor portion is coupled to the first and second conductive structures. the second semiconductor portion is coupled to the first conductive structure. the memory cell includes a charge storage structure coupled to the second semiconductor portion. the charge storage structure includes multiple portions. part of the conductive portion is located between portions of the charge storage structure and separated from the charge storage structure by a dielectric material.