Micron technology, inc. (20240188273). MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS simplified abstract
Contents
MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS
Organization Name
Inventor(s)
Kamal M. Karda of Boise ID (US)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
Karthik Sarpatwari of Boise ID (US)
MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240188273 titled 'MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS
The patent application describes an apparatus with multiple conductive structures and memory cells arranged in a specific configuration.
- The apparatus includes first, second, and third conductive structures, along with first and second memory cells positioned perpendicular to each other.
- Each memory cell consists of semiconductor portions located on different levels of the apparatus and coupled to specific conductive structures.
- The first and second memory cells have corresponding conductive regions opposite their semiconductor portions.
- This design allows for efficient data storage and retrieval within the apparatus.
Potential Applications: - This technology could be used in electronic devices requiring high-speed and reliable memory storage. - It may find applications in data centers, servers, and other computing systems where efficient memory management is crucial.
Problems Solved: - The technology addresses the need for compact and efficient memory storage solutions in electronic devices. - It improves data access speeds and overall performance of memory systems.
Benefits: - Enhanced memory storage capabilities. - Improved data processing speeds. - Compact design for space-saving in electronic devices.
Commercial Applications: Title: Advanced Memory Storage Technology for High-Performance Computing Systems This technology could be commercially applied in the development of next-generation computers, servers, and data storage devices, catering to industries reliant on high-performance computing solutions.
Prior Art: There may be existing patents or technologies related to memory storage systems, but this specific configuration and design may offer unique advantages and improvements.
Frequently Updated Research: As technology advances, ongoing research in memory storage systems and semiconductor technology may lead to further enhancements and applications of this innovative design.
Questions about Memory Storage Technology: 1. How does this memory storage technology compare to traditional memory systems in terms of performance and efficiency? 2. Are there any specific industries or applications where this technology would be particularly beneficial?
Original Abstract Submitted
some embodiments include apparatuses and methods of using the apparatuses. one of the apparatuses includes first, second, and third conductive structures, each having a length in a first direction, first and second memory cells spaced apart from each other in a second direction perpendicular to the first direction, first conductive regions, and second conductive regions. each of the first and second memory cells includes a first semiconductor portion located on a first level of the apparatus and coupled to the third conductive structure and one of the first and second conductive structures, a second semiconductor portion located on a second level of the apparatus and coupled to one of the first and second conductive structures. the first conductive regions are opposite the first and second semiconductor portions, respectively, of the first memory cell. second conductive regions are opposite the first and second semiconductor portions, respectively, of the second memory cell.
