Micron technology, inc. (20240186267). SEMICONDUCTOR DEVICES COMPRISING STEPS simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES COMPRISING STEPS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES COMPRISING STEPS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Commercial Applications
- 1.9 Prior Art
- 1.10 Frequently Updated Research
- 1.11 Questions about Semiconductor Device Formation
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICES COMPRISING STEPS
Organization Name
Inventor(s)
Rohit Kothari of Boise ID (US)
Adam L. Olson of Boise ID (US)
John D. Hopkins of Meridian ID (US)
SEMICONDUCTOR DEVICES COMPRISING STEPS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186267 titled 'SEMICONDUCTOR DEVICES COMPRISING STEPS
Simplified Explanation
The patent application describes a method for forming a semiconductor device by creating a patterned resist over a material stack, removing part of the stack exposed through the resist to make an opening, trimming the resist to expose more of the stack, removing additional stack material to create steps in the stack's sidewalls, filling the opening with dielectric material, and then planarizing it.
- Formation of patterned resist over a material stack
- Removal of stack material to create an opening
- Trimming of resist to expose more stack material
- Creation of steps in the stack's sidewalls
- Filling the opening with dielectric material
- Planarization of the dielectric material
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices, including integrated circuits, memory chips, and microprocessors.
Problems Solved
This method addresses the need for precise and controlled formation of semiconductor device structures, particularly in creating openings and filling them with dielectric material.
Benefits
The benefits of this technology include improved device performance, increased manufacturing efficiency, and enhanced reliability of semiconductor devices.
Commercial Applications
- Semiconductor manufacturing industry
- Electronics industry
- Research and development organizations
Prior Art
No specific prior art information is provided in the abstract.
Frequently Updated Research
There is no information on frequently updated research related to this technology.
Questions about Semiconductor Device Formation
Question 1
How does the method described in the patent application improve the manufacturing process of semiconductor devices?
The method enhances the precision and control in creating semiconductor device structures, leading to improved performance and reliability.
Question 2
What are the potential challenges in implementing this technology on an industrial scale?
Challenges may include optimizing the process for mass production, ensuring uniformity across devices, and managing costs effectively.
Original Abstract Submitted
a method of forming a semiconductor device comprising forming a patterned resist over a stack comprising at least one material and removing a portion of the stack exposed through the patterned resist to form a stack opening. a portion of the patterned resist is laterally removed to form a trimmed resist and an additional portion of the stack exposed through the trimmed resist is removed to form steps in sidewalls of the stack. a dielectric material is formed between the sidewalls of the stack to substantially completely fill the stack opening, and the dielectric material is planarized. additional methods are disclosed, as well as semiconductor devices.
