Micron technology, inc. (20240185934). PROGRAM VERIFY COMPENSATION BY SENSING TIME MODULATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK simplified abstract
Contents
PROGRAM VERIFY COMPENSATION BY SENSING TIME MODULATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK
Organization Name
Inventor(s)
Yu-Chung Lien of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
PROGRAM VERIFY COMPENSATION BY SENSING TIME MODULATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240185934 titled 'PROGRAM VERIFY COMPENSATION BY SENSING TIME MODULATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK
The abstract describes a patent application where a request is received to program a set of memory cells on a memory device with a sense amplifier circuit. A defect indicator associated with the memory cells is identified to meet a defect condition. A modified sensing time period, longer than the default period, is determined based on the defect indicator. The program operation is then carried out using the modified sensing time period during the program verify phase.
- The patent application involves programming memory cells on a memory device with a sense amplifier circuit.
- It includes determining a defect indicator for the memory cells to address a defect condition.
- A modified sensing time period is calculated based on the defect indicator, exceeding the default time period.
- The program operation utilizes the modified sensing time period during the program verify phase.
Potential Applications: - This technology can be applied in the manufacturing of memory devices to improve programming efficiency and accuracy. - It can enhance the reliability and performance of memory cells in various electronic devices.
Problems Solved: - Addresses defect conditions in memory cells during programming operations. - Improves the overall functionality and effectiveness of memory devices.
Benefits: - Increased efficiency and accuracy in programming memory cells. - Enhanced reliability and performance of memory devices. - Improved quality control in memory device manufacturing processes.
Commercial Applications: Title: Enhanced Memory Cell Programming Technology for Improved Efficiency This technology can be utilized in the production of memory devices for consumer electronics, data storage systems, and other electronic devices. It can lead to more reliable and high-performance memory products, catering to a wide range of commercial applications.
Prior Art: Information on prior art related to this specific technology is not provided in the abstract.
Frequently Updated Research: There is no information on frequently updated research relevant to this technology in the abstract.
Questions about Memory Cell Programming Technology: 1. How does this technology compare to existing methods of programming memory cells? 2. What are the potential implications of using a modified sensing time period in memory cell programming?
Original Abstract Submitted
a request to perform a program operation to program a set of memory cells on a memory device comprising a sense amplifier circuit is received. a defect indicator associated with the set of memory cells is determined to satisfy a defect condition. a modified sensing time period, exceeding a default sensing time period, is determined based on the defect indicator. the program operation is performed using the modified sensing time period during a program verify phase of the program operation.
