Micron technology, inc. (20240185931). PROGRAM VERIFY COMPENSATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK simplified abstract

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PROGRAM VERIFY COMPENSATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK

Organization Name

micron technology, inc.

Inventor(s)

Yu-Chung Lien of San Jose CA (US)

Jun Wan of San Jose CA (US)

Zhenming Zhou of San Jose CA (US)

PROGRAM VERIFY COMPENSATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240185931 titled 'PROGRAM VERIFY COMPENSATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK

The abstract of the patent application describes a process where a request is received to program a set of memory cells on a memory device. A defect indicator associated with the memory cells is determined to meet a defect condition, and a program verify parameter is set based on this indicator. The program operation is then carried out using this parameter during the program verify phase.

  • Key Features and Innovation:
 - Determination of defect indicator for memory cells
 - Setting program verify parameter based on defect indicator
 - Utilizing program verify parameter during program operation
  • Potential Applications:
 - Memory device programming
 - Quality control in memory cell programming
 - Error detection and correction in memory operations
  • Problems Solved:
 - Efficient programming of memory cells
 - Improved quality control in memory operations
 - Enhanced error detection capabilities
  • Benefits:
 - Increased reliability in memory operations
 - Streamlined programming process
 - Enhanced performance of memory devices
  • Commercial Applications:
 - Memory device manufacturing industry
 - Electronics and semiconductor companies
 - Quality control and testing equipment providers
  • Prior Art:
 - Any existing patents or technologies related to memory cell programming and defect detection
  • Frequently Updated Research:
 - Ongoing developments in memory device programming techniques
 - Latest advancements in defect detection in memory operations

Questions about memory cell programming and defect detection:

  • Question 1: How does the determination of the defect indicator impact the programming process?
 - The defect indicator helps in identifying memory cells that may not meet quality standards, allowing for appropriate adjustments during programming.
  • Question 2: What are the potential implications of setting the program verify parameter based on the defect indicator?
 - Setting the program verify parameter based on the defect indicator ensures that memory cells are programmed accurately and reliably, reducing the risk of errors in memory operations.


Original Abstract Submitted

a request to perform a program operation to program a set of memory cells on a memory device is received. a defect indicator associated with the set of memory cells is determined to satisfy a defect condition. a value of a program verify parameter is determined based on the defect indicator. the program operation is performed using the value of the program verify parameter during a program verify phase of the program operation.