Micron technology, inc. (20240185924). PASS VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK simplified abstract
Contents
PASS VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK
Organization Name
Inventor(s)
Yu-Chung Lien of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
PASS VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240185924 titled 'PASS VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE WITH A DEFECTIVE DECK
The patent application describes a system with a memory device and a processing device that can perform operations on a set of cells associated with a wordline in a block of the memory device.
- The system determines the physical disposition of decks within the block of memory, based on functionality criteria.
- If a second deck is below a first deck and does not meet the functionality criterion, a program operation is performed on the cells using a lower voltage during the program verify phase.
- This innovation allows for more efficient and targeted programming of memory cells, optimizing performance and energy consumption.
Potential Applications: - Memory devices in electronic devices - Data storage systems - Semiconductor manufacturing processes
Problems Solved: - Efficient programming of memory cells - Improved performance of memory devices - Energy optimization in memory operations
Benefits: - Enhanced memory device performance - Reduced energy consumption - Increased reliability of data storage
Commercial Applications: Title: "Advanced Memory Programming System for Enhanced Performance" This technology could be used in smartphones, computers, servers, and other electronic devices to improve memory operations and overall device performance.
Prior Art: There may be prior art related to memory programming techniques and optimizations in the field of semiconductor manufacturing and memory device design.
Frequently Updated Research: Stay updated on advancements in memory programming techniques, semiconductor manufacturing processes, and memory device technologies to enhance the efficiency and performance of memory systems.
Questions about Memory Programming Systems: 1. How does the physical disposition of memory decks impact memory programming efficiency? 2. What are the potential drawbacks of using lower voltages for memory programming operations?
Original Abstract Submitted
a system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a program operation on a set of cells associated with a wordline in a block of the memory device, the block comprising a plurality of decks; determining whether at least one second deck of the plurality of decks is physically disposed below at least one first deck of the plurality of decks, wherein the at least one first deck satisfies a criterion pertaining to a functionality of a deck, and the at least one second deck of the plurality of decks does not satisfy the criterion; and responsive to determining that the at least one second deck is physically disposed below the at least one first deck, performing the program operation on the set of cells associated with the wordline in the block using a first pass voltage applied during a program verify phase, wherein the first pass voltage is lower than a default program verify pass voltage.
