Micron technology, inc. (20240185915). OPTIMIZATION OF SOFT BIT WINDOWS BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS simplified abstract
Contents
OPTIMIZATION OF SOFT BIT WINDOWS BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS
Organization Name
Inventor(s)
James Fitzpatrick of Laguna Niguel CA (US)
Sivagnanam Parthasarathy of Carlsbad CA (US)
Patrick Robert Khayat of San Diego CA (US)
AbdelHakim S. Alhussien of San Jose CA (US)
OPTIMIZATION OF SOFT BIT WINDOWS BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240185915 titled 'OPTIMIZATION OF SOFT BIT WINDOWS BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS
Simplified Explanation: The patent application describes a memory device that can determine a voltage window for reading soft bit data by analyzing signal and noise characteristics at different test voltages.
- The memory device reads memory cells at various test voltages to optimize the read voltage for hard bit data and establish a voltage window for soft bit data.
- Soft bit data is determined by the exclusive OR (XOR) of results obtained from reading memory cells at different voltages.
- The response to a read command is based on both hard bit data and soft bit data.
Key Features and Innovation:
- Voltage window determination for reading soft bit data.
- Optimization of read voltage for hard bit data.
- Analysis of signal and noise characteristics at different test voltages.
- Utilization of XOR operation to identify soft bit data.
Potential Applications:
- Data storage devices.
- Error correction systems.
- Communication systems.
Problems Solved:
- Efficient reading of soft bit data.
- Improved accuracy in data retrieval.
- Enhanced data storage capabilities.
Benefits:
- Enhanced data reading accuracy.
- Increased data storage efficiency.
- Improved error correction capabilities.
Commercial Applications: Title: Voltage Window Determination Technology for Memory Devices This technology can be applied in:
- Solid-state drives.
- Embedded systems.
- Cloud storage solutions.
Prior Art: No prior art information available at this time.
Frequently Updated Research: No frequently updated research available at this time.
Questions about Voltage Window Determination Technology for Memory Devices: 1. How does the memory device determine the optimized read voltage for hard bit data? 2. What are the potential implications of using XOR operations to identify soft bit data?
Original Abstract Submitted
a memory device to determine a voltage window to read soft bit data. for example, in response to a read command, the memory device can read a group of memory cells at a plurality of test voltages to determine signal and noise characteristics, which can be used to determine an optimized read voltage for reading hard bit data and a voltage window between a first voltage and a second voltage for reading soft bit data. the soft bit data identifies exclusive or (xor) of results read from the group of memory cells at the first voltage and at the second voltage respective. the memory device can provide a response to the read command based on the hard bit data and the soft bit data.
