Micron technology, inc. (20240185892). MEMORY ARRAY DECODING AND INTERCONNECTS simplified abstract
Contents
MEMORY ARRAY DECODING AND INTERCONNECTS
Organization Name
Inventor(s)
Hernan A. Castro of Shingle Springs CA (US)
Stephen W. Russell of Boise ID (US)
Stephen H. Tang of Fremont CA (US)
MEMORY ARRAY DECODING AND INTERCONNECTS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240185892 titled 'MEMORY ARRAY DECODING AND INTERCONNECTS
Simplified Explanation: The patent application describes methods and apparatuses for thin film transistors and related fabrication techniques, specifically focusing on building thin film transistors within a composite stack using patterns of vias at the top layer to access memory cells in a cross-point architecture.
- Thin film transistors accessing multiple decks of memory cells in a cross-point architecture
- Fabrication techniques utilizing patterns of vias at the top layer of a composite stack
- Building thin film transistors within the composite stack with reduced processing steps
- Different configurations of thin film transistors using different groups of vias
- Construction of circuits and components of a memory device using thin film transistors and via-based fabrication techniques
Potential Applications: This technology can be applied in the development of advanced memory devices, particularly in creating efficient and compact memory arrays with improved performance.
Problems Solved: - Simplifying the fabrication process of thin film transistors within a composite stack - Enhancing the accessibility and functionality of memory cells in a cross-point architecture - Reducing the number of processing steps required for building thin film transistors
Benefits: - Improved efficiency in memory device construction - Enhanced performance of memory arrays - Cost-effective fabrication techniques
Commercial Applications: Potential commercial applications include the production of high-density memory devices for consumer electronics, data storage systems, and other semiconductor-based products. This technology could revolutionize the memory industry by offering more efficient and reliable memory solutions.
Prior Art: Information on prior art related to this technology is not provided in the abstract.
Frequently Updated Research: There is ongoing research in the field of thin film transistors and memory device fabrication techniques to further enhance performance and efficiency.
Questions about Thin Film Transistors and Memory Device Fabrication Techniques: 1. How do the patterns of vias at the top layer of the composite stack contribute to the construction of thin film transistors? 2. What are the specific advantages of utilizing thin film transistors in memory device construction compared to traditional methods?
Original Abstract Submitted
methods and apparatuses for thin film transistors and related fabrication techniques are described. the thin film transistors may access two or more decks of memory cells disposed in a cross-point architecture. the fabrication techniques may use one or more patterns of vias formed at a top layer of a composite stack, which may facilitate building the thin film transistors within the composite stack while using a reduced number of processing steps. different configurations of the thin film transistors may be built using the fabrication techniques by utilizing different groups of the vias. further, circuits and components of a memory device (e.g., decoder circuitry, interconnects between aspects of one or more memory arrays) may be constructed using the thin film transistors as described herein along with related via-based fabrication techniques.
