Micron technology, inc. (20240184481). MITIGATING SLOW READ DISTURB IN A MEMORY SUB-SYSTEM simplified abstract
Contents
MITIGATING SLOW READ DISTURB IN A MEMORY SUB-SYSTEM
Organization Name
Inventor(s)
Vamsi Pavan Rayaprolu of Santa Clara CA (US)
Kishore Kumar Muchherla of San Jose CA (US)
Ashutosh Malshe of Fremont CA (US)
Giuseppina Puzzilli of Boise ID (US)
Saeed Sharifi Tehrani of San Diego CA (US)
MITIGATING SLOW READ DISTURB IN A MEMORY SUB-SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240184481 titled 'MITIGATING SLOW READ DISTURB IN A MEMORY SUB-SYSTEM
The patent application describes a system with a memory device and a processing device that can perform operations such as tracking the number of read operations on a memory block and issuing a voltage discharge command to the block.
- The system increments a counter associated with a memory block to track the number of read operations performed on the block.
- It sets a timer associated with the block to an initial value.
- The system determines when the counter and timer values indicate a minimum number of read operations on the block.
- It then issues a voltage discharge command to the block, causing it to reach ground voltage.
Potential Applications: - This technology could be used in data storage systems to manage memory blocks efficiently. - It could also be applied in embedded systems where power management is crucial.
Problems Solved: - Efficient tracking and management of read operations on memory blocks. - Controlled voltage discharge to optimize memory block performance.
Benefits: - Improved memory block management. - Enhanced power efficiency in data storage systems.
Commercial Applications: Title: "Enhanced Memory Block Management System for Data Storage" This technology could be valuable for companies developing data storage solutions, embedded systems, and IoT devices. It can improve performance and power efficiency, leading to cost savings and enhanced user experience.
Prior Art: No specific prior art information provided in the abstract.
Frequently Updated Research: No information on frequently updated research related to this technology provided in the abstract.
Questions about Memory Block Management System: 1. How does the system determine the minimum number of read operations before issuing a voltage discharge command? 2. What are the potential implications of using this technology in large-scale data centers?
Original Abstract Submitted
disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, responsive to receiving a read request to perform a read operation on a block of the memory device, incrementing a counter associated with the block to track a number of read operations performed on the block; setting a timer associated with the block to an initial value; determining that respective values of the counter and the timer are indicative of a minimum number of read operations performed on the block; and issuing a voltage discharge command to the block, wherein issuing the voltage discharge command results in the block reaching a ground voltage.
