Micron technology, inc. (20240178297). SEMICONDUCTOR STRUCTURE WITH NITRIDE CAPS simplified abstract
Contents
- 1 SEMICONDUCTOR STRUCTURE WITH NITRIDE CAPS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE WITH NITRIDE CAPS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing semiconductor structures with nitride caps in terms of performance and reliability?
- 1.11 What are the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE WITH NITRIDE CAPS
Organization Name
Inventor(s)
SEMICONDUCTOR STRUCTURE WITH NITRIDE CAPS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178297 titled 'SEMICONDUCTOR STRUCTURE WITH NITRIDE CAPS
Simplified Explanation
The patent application describes methods, apparatuses, and systems related to semiconductor structures with nitride caps. An example apparatus includes a semiconductor structure with a patterned material comprising active areas, a metal material on the surface of each active area, a second conductive material, a third conductive material, a first dielectric material, and a nitride material adjacent to each vertical side of the second conductive material, the third conductive material, and the first dielectric material. The apparatus also includes a second nitride material on the first horizontal surface of each nitride material and each first dielectric material, as well as a second metal material.
- Semiconductor structure with nitride caps
- Patterned material with active areas and metal material
- Second conductive material, third conductive material, and first dielectric material
- Nitride material adjacent to vertical sides
- Second nitride material on horizontal surfaces
- Second metal material
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for the development of advanced electronic devices with improved performance and reliability.
Problems Solved
This technology addresses the need for enhanced semiconductor structures with nitride caps to protect and improve the functionality of active areas in electronic devices.
Benefits
The benefits of this technology include increased durability, better electrical conductivity, and improved overall performance of semiconductor structures.
Potential Commercial Applications
The potential commercial applications of this technology could include the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics.
Possible Prior Art
One possible prior art for this technology could be the use of nitride caps in semiconductor structures to enhance their performance and reliability.
Unanswered Questions
How does this technology compare to existing semiconductor structures with nitride caps in terms of performance and reliability?
The article does not provide a direct comparison between this technology and existing semiconductor structures with nitride caps. Further research and testing may be needed to determine the specific advantages of this innovation over current solutions.
What are the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes?
The article does not address the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes. Factors such as cost, scalability, and compatibility with existing production methods may need to be considered in future studies.
Original Abstract Submitted
methods, apparatuses, and systems related to semiconductor structure with nitride caps are described. an example apparatus includes a semiconductor structure comprising a patterned material comprising active areas, a metal material on a surface of each active area. the patterned material further includes a second conductive material, a third conductive material, and a first dielectric material, and a nitride material adjacent each vertical side of the second conductive material, the third conductive material, and the first dielectric material. the apparatus includes a second nitride material on a first horizontal surface of each nitride material and each first dielectric material, and a second metal material.
