Micron technology, inc. (20240178170). CONDUCTIVE BUFFER LAYERS FOR SEMICONDUCTOR DIE ASSEMBLIES AND ASSOCIATED SYSTEMS AND METHODS simplified abstract

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CONDUCTIVE BUFFER LAYERS FOR SEMICONDUCTOR DIE ASSEMBLIES AND ASSOCIATED SYSTEMS AND METHODS

Organization Name

micron technology, inc.

Inventor(s)

Wei Zhou of Boise ID (US)

CONDUCTIVE BUFFER LAYERS FOR SEMICONDUCTOR DIE ASSEMBLIES AND ASSOCIATED SYSTEMS AND METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178170 titled 'CONDUCTIVE BUFFER LAYERS FOR SEMICONDUCTOR DIE ASSEMBLIES AND ASSOCIATED SYSTEMS AND METHODS

Simplified Explanation

The abstract describes a patent application for conductive buffer layers in semiconductor die assemblies. The innovation involves using a conductive buffer material between copper pads on two semiconductor dies to form an interconnect.

  • The semiconductor die assembly includes first and second semiconductor dies directly bonded to each other.
  • The first semiconductor die has a first copper pad, and the second semiconductor die has a second copper pad.
  • The interconnect between the dies is formed by the first and second copper pads with a conductive buffer material in between, consisting of aggregates of conductive particles.
  • The conductive buffer material allows electrical connection between the copper pads without them being physically joined.
  • The conductive buffer material is porous, enabling compression of the conductive particles under pressure.

Potential Applications

The technology could be applied in semiconductor manufacturing, electronic devices, and integrated circuits.

Problems Solved

This innovation solves the problem of creating a reliable and efficient electrical connection between semiconductor dies without direct physical contact.

Benefits

The conductive buffer layers improve the performance and reliability of semiconductor die assemblies by providing a stable and conductive interconnect.

Potential Commercial Applications

This technology could be utilized in the production of advanced electronic devices, high-performance computing systems, and telecommunications equipment.

Possible Prior Art

Prior art may include similar methods of creating interconnects between semiconductor dies using conductive materials, but the specific use of porous conductive buffer layers with aggregates of conductive particles may be unique to this patent application.

Unanswered Questions

1. How does the conductive buffer material affect the overall size and thickness of the semiconductor die assembly? 2. Are there any limitations to the types of semiconductor materials that can be used with this conductive buffer layer technology?


Original Abstract Submitted

conductive buffer layers for semiconductor die assemblies, and associated systems and methods are disclosed. in an embodiment, a semiconductor die assembly includes first and second semiconductor dies directly bonded to each other. the first semiconductor die includes a first copper pad and the second semiconductor die includes a second copper pad. the first and second copper pads form an interconnect between the first and second semiconductor dies, and the interconnect includes a conductive buffer material between the first and second copper pads, where the conductive buffer material includes aggregates of conductive particles. in some embodiments, the first and second copper pads are not conjoined but electrically connected to each other through the conductive buffer material. in some embodiments, the conductive buffer material is porous such that the aggregates of conductive particles can be compressed together in response to the pressure applied to the conductive buffer layer.

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