Micron technology, inc. (20240178148). ETCH-BACK OPENING WITH PROTECTIVE FILL STRUCTURE simplified abstract
Contents
- 1 ETCH-BACK OPENING WITH PROTECTIVE FILL STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ETCH-BACK OPENING WITH PROTECTIVE FILL STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
ETCH-BACK OPENING WITH PROTECTIVE FILL STRUCTURE
Organization Name
Inventor(s)
Kimball Davis Lowry of Boise ID (US)
Avishesh Dhakal of Meridian ID (US)
ETCH-BACK OPENING WITH PROTECTIVE FILL STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178148 titled 'ETCH-BACK OPENING WITH PROTECTIVE FILL STRUCTURE
Simplified Explanation
The semiconductor substrate assembly described in the abstract includes a top insulator layer, a conductive layer, a bottom insulator layer, and a protective fill structure. The protective fill structure is adjacent to the end of a conductive structure and passes through the top insulator layer to the bottom insulator layer.
- The substrate assembly consists of a top insulator layer, a conductive layer, a bottom insulator layer, and a protective fill structure.
- The protective fill structure is positioned next to the end of a conductive structure and extends through the top insulator layer to the bottom insulator layer.
Potential Applications
The technology described in this patent application could be applied in the manufacturing of semiconductor devices, integrated circuits, and other electronic components that require precise insulation and protection of conductive structures.
Problems Solved
This technology solves the problem of protecting the ends of conductive structures in semiconductor substrate assemblies from damage or interference, ensuring the reliability and performance of electronic devices.
Benefits
The benefits of this technology include improved durability, enhanced electrical insulation, and increased reliability of semiconductor devices and electronic components.
Potential Commercial Applications
The technology described in this patent application has potential commercial applications in the semiconductor industry, electronics manufacturing, and other sectors that rely on advanced semiconductor technologies.
Possible Prior Art
One possible prior art related to this technology could be the use of protective fill structures in semiconductor devices to insulate and shield conductive elements. However, the specific configuration and positioning of the protective fill structure described in this patent application may be novel and inventive.
Unanswered Questions
How does this technology compare to existing methods of protecting conductive structures in semiconductor devices?
This article does not provide a direct comparison to existing methods of protecting conductive structures in semiconductor devices. It would be helpful to understand the advantages and limitations of this technology in comparison to traditional approaches.
What are the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes?
The article does not address the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes. It would be important to consider factors such as cost, scalability, and compatibility with existing manufacturing equipment.
Original Abstract Submitted
implementations described herein relate to a semiconductor substrate assembly and methods of manufacturing. the substrate assembly may include a top insulator layer and a conductive layer below the top insulator layer. the conductive layer may include an end of a conductive structure. the substrate assembly may include a bottom insulator layer below the conductive layer. the substrate assembly may include a protective fill structure. the protective fill structure may be adjacent to the end of the conductive structure and pass at least partially through the top insulator layer to the bottom insulator layer.
