Micron technology, inc. (20240177795). DYNAMIC READ CALIBRATION simplified abstract
Contents
- 1 DYNAMIC READ CALIBRATION
DYNAMIC READ CALIBRATION
Organization Name
Inventor(s)
Li-Te Chang of San Jose CA (US)
Aaron Lee of Sunnyvale CA (US)
Zhenming Zhou of San Jose CA (US)
Murong Lang of San Jose CA (US)
DYNAMIC READ CALIBRATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240177795 titled 'DYNAMIC READ CALIBRATION
Simplified Explanation
The patent application describes a system that includes a memory device with multiple cells and a processing device to perform various operations related to managing charge loss in the cells.
- Identifying a group of wordlines connected to a subset of cells and assigning a specified charge loss classification value to that group.
- Selecting a page level and a first set of cells, determining a value of a first data state metric for the first set of cells.
- Identifying a second set of cells charged to a specified charge state and determining a value of a second data state metric.
- Maintaining a skew counter of the second data state metric, identifying and updating a read reference voltage offset, and applying the updated offset in a read operation.
Potential Applications
The technology described in the patent application could be applied in various memory devices, such as solid-state drives, to improve data retention and reliability.
Problems Solved
This technology addresses the issue of charge loss in memory cells, which can lead to data corruption and loss of information stored in the memory device.
Benefits
The system's ability to classify charge loss, update read reference voltage offsets, and maintain data state metrics can enhance the overall performance and longevity of memory devices.
Potential Commercial Applications
The technology could be valuable in the development of more reliable and efficient memory devices for consumer electronics, data centers, and other applications where data storage is critical.
Possible Prior Art
One potential prior art could be techniques used in flash memory devices to manage charge loss and maintain data integrity.
Unanswered Questions
How does this technology compare to existing methods for managing charge loss in memory devices?
The article does not provide a direct comparison between this technology and existing methods for managing charge loss in memory devices.
What are the specific technical specifications required for implementing this system in different types of memory devices?
The article does not delve into the specific technical specifications needed for implementing this system in various memory devices.
Original Abstract Submitted
a system includes a memory device with multiple cells and a processing device to perform operations including: identifying a group of wordlines, each connected to a subset of cells, and assigning a specified charge loss classification value to that group. the operations can also include selecting a page level, selecting a first set of cells, determining, for the first set of cells, a value of a first data state metric, identifying a second set of cells charged to a specified charge state, and determining a value of a second data state metric. the operations can also include maintaining a skew counter of the second data state metric, identifying and updating a read reference voltage offset, as well as applying the updated read reference voltage offset in a read operation.
