Micron technology, inc. (20240177792). COUNTER-BASED SENSE AMPLIFIER METHOD FOR MEMORY CELLS simplified abstract

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COUNTER-BASED SENSE AMPLIFIER METHOD FOR MEMORY CELLS

Organization Name

micron technology, inc.

Inventor(s)

Riccardo Muzzetto of Arcore (MB) (IT)

Ferdinando Bedeschi of Biassono (MB) (IT)

Umberto Di Vincenzo of Capriate San Gervasio (BG) (IT)

COUNTER-BASED SENSE AMPLIFIER METHOD FOR MEMORY CELLS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240177792 titled 'COUNTER-BASED SENSE AMPLIFIER METHOD FOR MEMORY CELLS

Simplified Explanation

The abstract describes methods, systems, and devices related to a counter-based sense amplifier method for memory cells. The counter-based read algorithm includes various phases.

  • Counter-based sense amplifier method for memory cells
  • Read algorithm with multiple phases
  • Simplified explanation of the patent application abstract

Potential Applications

The technology could be applied in:

  • Memory devices
  • Data storage systems
  • Computing systems

Problems Solved

This technology addresses issues such as:

  • Enhancing memory cell read operations
  • Improving data retrieval speed
  • Increasing memory efficiency

Benefits

The benefits of this technology include:

  • Faster read operations
  • Improved memory performance
  • Enhanced data access speed

Potential Commercial Applications

The technology could be utilized in various commercial applications, including:

  • Consumer electronics
  • Cloud computing services
  • Data centers

Possible Prior Art

One possible prior art could be:

  • Traditional sense amplifier methods
  • Conventional memory cell read algorithms

Unanswered Questions

How does this technology compare to existing sense amplifier methods?

The article does not provide a direct comparison to traditional sense amplifier methods.

What specific memory cell types can benefit most from this innovation?

The article does not specify which types of memory cells would see the most significant improvements with this technology.


Original Abstract Submitted

methods, systems, and devices related to counter-based sense amplifier method for memory cells are described. the counter-based read algorithm may comprise the following phases: