Micron technology, inc. (20240177781). READ OPERATION WITH CAPACITY USAGE DETECTION SCHEME simplified abstract
Contents
- 1 READ OPERATION WITH CAPACITY USAGE DETECTION SCHEME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 READ OPERATION WITH CAPACITY USAGE DETECTION SCHEME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
READ OPERATION WITH CAPACITY USAGE DETECTION SCHEME
Organization Name
Inventor(s)
Yu-Chung Lien of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
READ OPERATION WITH CAPACITY USAGE DETECTION SCHEME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240177781 titled 'READ OPERATION WITH CAPACITY USAGE DETECTION SCHEME
Simplified Explanation
The method described in the abstract involves compensating for partial block read in a memory device by adjusting voltages applied to the wordline and bitline connected to a specified memory cell.
- Receiving a read request specifying a memory cell connected to a string of series-connected memory cells in an array of memory cells.
- Ramping the voltage applied to the wordline connected to the specified memory cell to a predetermined value.
- Ramping the voltage applied to the bitline connected to the specified memory cell to a predetermined value.
- Comparing the current along the string with a reference current using a current comparator to generate an analog output signal.
- Applying a voltage offset to the read voltage level during a sensing operation based on the analog output signal.
Potential Applications
This technology can be applied in various memory devices such as NAND flash memory, SSDs, and other non-volatile memory systems.
Problems Solved
This technology addresses the issue of partial block read in memory devices, ensuring accurate and reliable data retrieval.
Benefits
The method improves the efficiency and accuracy of read operations in memory devices, leading to enhanced performance and data integrity.
Potential Commercial Applications
This technology can be utilized in the development of faster and more reliable memory devices for consumer electronics, data storage systems, and other applications.
Possible Prior Art
Prior art in the field of memory devices may include techniques for read compensation and data sensing in non-volatile memory systems.
Unanswered Questions
How does this method impact the overall power consumption of the memory device?
The abstract does not provide information on the power consumption implications of implementing this method. It would be important to understand if there are any changes in power efficiency with the introduction of this compensation technique.
Are there any limitations to the size or configuration of memory arrays where this method can be effectively applied?
The abstract does not mention any restrictions on the size or configuration of memory arrays for implementing this compensation method. It would be valuable to know if there are any limitations in terms of scalability or compatibility with different memory array designs.
Original Abstract Submitted
a method for partial block read compensation can include receiving a read request that specifies a memory cell connected to a string of series-connected memory cells in an array of memory cells on a memory device, the string located at an intersection of a wordline and a bitline, and causing a first voltage applied to the wordline to which the specified memory cell is connected to ramp to a first predetermined value. the method can include causing a second voltage applied to the bitline to which the specified memory cell is connected to ramp to a second predetermined value, and can include comparing, using a current comparator, a current along the string with a reference current to generate an analog output signal. it can also include causing a voltage offset, based on the analog output signal, to be applied to a read voltage level during a sensing operation.
