Micron technology, inc. (20240177755). VOLATILE DATA STORAGE IN NAND MEMORY simplified abstract
Contents
- 1 VOLATILE DATA STORAGE IN NAND MEMORY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VOLATILE DATA STORAGE IN NAND MEMORY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
VOLATILE DATA STORAGE IN NAND MEMORY
Organization Name
Inventor(s)
Jeffrey S. Mcneil of Nampa ID (US)
Eric N. Lee of San Jose CA (US)
Tomoko Ogura Iwasaki of San Jose CA (US)
Sheyang Ning of San Jose CA (US)
Lawrence Celso Miranda of San Jose CA (US)
Kishore Kumar Muchherla of San Jose CA (US)
VOLATILE DATA STORAGE IN NAND MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240177755 titled 'VOLATILE DATA STORAGE IN NAND MEMORY
Simplified Explanation
The patent application describes a memory system that includes an array of memory cells organized in strings of series-connected memory cells. The system has a controller that can access different strings of memory cells in different modes of operation, allowing for both volatile and non-volatile storage of data.
- Memory system with array of memory cells
- Strings of series-connected memory cells
- Controller for accessing different strings in different modes
- Volatile storage of data in one mode
- Non-volatile storage of data in another mode
Potential Applications
The technology described in the patent application could be used in various electronic devices that require both volatile and non-volatile memory storage, such as smartphones, tablets, and computers.
Problems Solved
This technology solves the problem of efficiently managing both volatile and non-volatile data storage in a memory system, providing a more versatile and flexible solution for storing and accessing data.
Benefits
The benefits of this technology include improved data storage efficiency, faster access times, and increased reliability of memory systems in electronic devices.
Potential Commercial Applications
The technology could be commercially applied in the development of next-generation memory systems for consumer electronics, industrial applications, and data storage solutions.
Possible Prior Art
One possible prior art for this technology could be the use of multi-level cell (MLC) NAND flash memory, which allows for multiple bits to be stored in a single memory cell, enabling higher storage density.
Unanswered Questions
How does this technology compare to existing memory systems in terms of speed and reliability?
The article does not provide a direct comparison between this technology and existing memory systems in terms of speed and reliability.
What are the potential limitations or challenges in implementing this technology in real-world applications?
The article does not address any potential limitations or challenges in implementing this technology in real-world applications.
Original Abstract Submitted
memories might include an array of memory cells having a plurality of strings of series-connected memory cells and a controller configured to cause to memory to access a first string of series-connected memory cells of the plurality of strings of series-connected memory cells in a first mode of operation for volatile storage of data to the first string of series-connected memory cells, and access a second string of series-connected memory cells of the plurality of strings of series-connected memory cells in a second mode of operation for non-volatile storage of respective data to each memory cell of a plurality of memory cells of the second string of series-connected memory cells
