Micron technology, inc. (20240164114). Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry simplified abstract

Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry

Organization Name

micron technology, inc.

Inventor(s)

Hung-Wei Liu of Meridian ID (US)

Vassil N. Antonov of Boise ID (US)

Ashonita A. Chavan of Boise ID (US)

Darwin Franseda Fan of Boise ID (US)

Jeffery B. Hull of Boise ID (US)

Anish A. Khandekar of Boise ID (US)

Masihhur R. Laskar of Boise ID (US)

Albert Liao of Boise ID (US)

Xue-Feng Lin of Boise ID (US)

Manuj Nahar of Boise ID (US)

Irina V. Vasilyeva of Boise ID (US)

Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240164114 titled 'Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry

Simplified Explanation

The abstract describes a method of forming a vertical transistor with specific microwave annealing steps to reduce the concentration of a particular element in the channel region.

• The method involves multiple time-spaced microwave annealing steps.
• The annealing steps reduce the average concentration of elemental-form H in the channel region.
• The reduced concentration of elemental-form H is between 0.005 to less than 1 atomic percent.

Potential Applications

This technology could be applied in the semiconductor industry for the production of vertical transistors with improved performance and reliability.

Problems Solved

This method addresses the issue of high concentration of elemental-form H in the channel region of vertical transistors, which can negatively impact device performance.

Benefits

• Improved transistor performance
• Enhanced device reliability
• Increased efficiency in semiconductor manufacturing processes

Potential Commercial Applications

Vertical transistors produced using this method could be used in various electronic devices, such as smartphones, computers, and other consumer electronics.

Possible Prior Art

There may be prior art related to methods of annealing in semiconductor device fabrication processes, but specific examples are not provided in the abstract.

How does this method compare to traditional annealing techniques in terms of efficiency and effectiveness?

This article does not provide a direct comparison between the proposed microwave annealing method and traditional annealing techniques. Further research or experimentation may be needed to determine the advantages and limitations of this approach.

What impact does the reduced concentration of elemental-form H have on the overall performance of the vertical transistor?

While the abstract mentions a reduction in the concentration of elemental-form H in the channel region, it does not explicitly state how this reduction affects the performance of the vertical transistor. Additional studies or data analysis may be necessary to understand the implications of this change.

Original Abstract Submitted

a method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. the multiple time-spaced microwave annealing steps reduce average concentration of elemental-form h in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. the reduced average concentration of elemental-form h is 0.005 to less than 1 atomic percent. structure embodiments are disclosed.