Micron technology, inc. (20240164113). MEMORY STRUCTURES WITH VOIDS simplified abstract
Contents
- 1 MEMORY STRUCTURES WITH VOIDS
MEMORY STRUCTURES WITH VOIDS
Organization Name
Inventor(s)
Alessandro Calderoni of Boise ID (US)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
MEMORY STRUCTURES WITH VOIDS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240164113 titled 'MEMORY STRUCTURES WITH VOIDS
Simplified Explanation
The abstract describes methods, systems, and devices for memory structures with voids, where memory cells are formed on sacrificial structures and voids are created between adjacent columns of memory cells.
- Memory architecture may include voids between adjacent columns of memory cells.
- Sacrificial structures and liner material are used to create voids in the memory array.
- Memory cells are formed on sacrificial structures by patterning conductive material for bottom electrodes, ferroelectric material, and plate lines.
- Voids are created by removing sacrificial structures between columns of memory cells.
Potential Applications
This technology could be applied in the development of high-density memory devices, such as non-volatile memory chips, where space optimization is crucial.
Problems Solved
This innovation solves the problem of efficiently utilizing space in memory architectures by creating voids between memory cells, allowing for higher density memory arrays.
Benefits
The benefits of this technology include increased memory density, improved performance, and potentially lower production costs due to optimized space utilization.
Potential Commercial Applications
"Optimized Memory Structures for High-Density Memory Devices" could find applications in the semiconductor industry for the development of next-generation memory chips.
Possible Prior Art
One possible prior art could be the use of sacrificial structures in semiconductor manufacturing processes to create voids or channels for various applications.
Unanswered Questions
How does this technology impact power consumption in memory devices?
This article does not address the potential impact of voids between memory cells on power consumption in memory devices. It would be interesting to explore whether the optimized space utilization leads to any power efficiency improvements.
What are the potential challenges in scaling up this technology for mass production?
The article does not discuss the scalability of this technology for mass production. It would be important to understand the challenges and considerations involved in scaling up the manufacturing process for commercial applications.
Original Abstract Submitted
methods, systems, and devices for memory structures with voids are described. a memory architecture may include voids between adjacent columns of memory cells. for example, a memory array may be manufactured by forming one or more sacrificial structures, as well as a liner material on sidewalls of the sacrificial structures, extending in the column direction. memory cells may be formed on the sacrificial structures by patterning a conductive material to form bottom electrodes, forming a ferroelectric material adjacent to the bottom electrodes, and forming a set of plate lines over the ferroelectric material. the sacrificial structures may then be removed to form voids between at least some adjacent columns of memory cells.
