Micron technology, inc. (20240164093). Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract
Contents
- 1 Integrated Assemblies and Methods of Forming Integrated Assemblies
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Integrated Assemblies and Methods of Forming Integrated Assemblies - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Integrated Assemblies and Methods of Forming Integrated Assemblies
Organization Name
Inventor(s)
Jordan D. Greenlee of Boise ID (US)
Alyssa N. Scarbrough of Boise ID (US)
John D. Hopkins of Meridian ID (US)
Integrated Assemblies and Methods of Forming Integrated Assemblies - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240164093 titled 'Integrated Assemblies and Methods of Forming Integrated Assemblies
Simplified Explanation
The abstract describes an integrated assembly with memory regions, channel-material pillars, conductive posts, source structure, doped semiconductor material, and rings made of insulative materials.
- Integrated assembly with memory regions, channel-material pillars, conductive posts, source structure, doped semiconductor material, and rings.
- Memory region and another region adjacent to each other.
- Source structure coupled to lower regions of the channel-material pillars.
- Panel separating first memory-block-region from second memory-block-region.
- Rings laterally surrounding lower regions of the conductive posts.
- Rings made of laminates of insulative materials.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Memory storage devices
- Integrated circuits
Problems Solved
This technology helps in:
- Improving memory storage efficiency
- Enhancing semiconductor device performance
- Reducing power consumption
Benefits
The benefits of this technology include:
- Higher data storage capacity
- Faster data processing speeds
- Lower energy consumption
Potential Commercial Applications
Potential commercial applications of this technology could be:
- Consumer electronics
- Data centers
- Telecommunications industry
Possible Prior Art
There is no prior art known at this time.
Unanswered Questions
How does this technology compare to existing memory storage solutions?
This article does not provide a direct comparison to existing memory storage solutions.
What are the potential limitations or challenges of implementing this technology?
The article does not address any potential limitations or challenges of implementing this technology.
Original Abstract Submitted
some embodiments include an integrated assembly having a memory region and another region adjacent the memory region. channel-material-pillars are arranged within the memory region, and conductive posts are arranged within said other region. a source structure is coupled to lower regions of the channel-material-pillars. a panel extends across the memory region and said other region, and separates a first memory-block-region from a second memory-block-region. doped-semiconductor-material is directly adjacent to the panel within the memory region and the other region. rings laterally surround lower regions of the conductive posts. the rings are between the conductive posts and the doped-semiconductor-material. the rings include laminates of two or more materials, with at least one of said two or more materials being insulative. some embodiments include methods for forming integrated assemblies.
