Micron technology, inc. (20240164083). MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS simplified abstract
Contents
- 1 MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
Organization Name
Inventor(s)
Yuichi Yokoyama of Boise ID (US)
MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240164083 titled 'MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
Simplified Explanation
The microelectronic device described in the abstract features a stack structure with an array region and a staircase region. The array region consists of vertically spaced first conductive structures, while the staircase region includes second conductive structures vertically spaced and coupled to the first conductive structures. The second conductive structures have portions extending in different horizontal directions, creating a staircase-like structure with steps defined by the edges of the second conductive structures.
- The microelectronic device comprises a stack structure with an array region and a staircase region.
- The array region contains vertically spaced first conductive structures.
- The staircase region includes second conductive structures vertically spaced and coupled to the first conductive structures.
- The second conductive structures have portions extending in different horizontal directions, creating a staircase-like structure with steps defined by their edges.
Potential Applications
The technology described in this patent application could be applied in:
- Memory devices
- Electronic systems
- Microelectronic devices
Problems Solved
This technology helps solve the following problems:
- Efficient use of space in microelectronic devices
- Improved connectivity between conductive structures
- Enhanced performance in memory devices
Benefits
The benefits of this technology include:
- Increased functionality in microelectronic devices
- Enhanced data storage capabilities
- Improved overall performance and efficiency
Potential Commercial Applications
A potential commercial application for this technology could be in:
- Semiconductor manufacturing industry
- Consumer electronics market
- Data storage and memory device production
Possible Prior Art
One possible prior art for this technology could be:
- Stacked memory devices with vertically spaced conductive structures
- Semiconductor devices with staircase-like structures for improved connectivity
Unanswered Questions
How does this technology compare to existing memory device designs?
This article does not provide a direct comparison with existing memory device designs to showcase the advantages of the proposed technology.
What specific electronic systems could benefit the most from this innovation?
The article does not delve into the specific electronic systems that could benefit the most from the described technology, leaving room for further exploration and analysis.
Original Abstract Submitted
a microelectronic device comprises a stack structure comprising an array region comprising first conductive structures vertically spaced from one another, and a staircase region horizontally neighboring the array region and comprising second conductive structures vertically spaced from one another and coupled to the first conductive structures. the second conductive structures individually comprise portions extending in a first horizontal direction, and additional portions extending in a second horizontal direction transverse to the first horizontal direction. the staircase region comprises staircase structures having steps partially defined by edges of the second conductive structures. some of the steps extend in the first horizontal direction and some others of the steps extend in the second horizontal direction. related memory devices, electronic systems, and methods are also described.
