Micron technology, inc. (20240162325). ELECTRONIC DEVICES COMPRISING A STACK STRUCTURE, A SOURCE CONTACT, AND A DIELECTRIC MATERIAL simplified abstract
Contents
- 1 ELECTRONIC DEVICES COMPRISING A STACK STRUCTURE, A SOURCE CONTACT, AND A DIELECTRIC MATERIAL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ELECTRONIC DEVICES COMPRISING A STACK STRUCTURE, A SOURCE CONTACT, AND A DIELECTRIC MATERIAL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
ELECTRONIC DEVICES COMPRISING A STACK STRUCTURE, A SOURCE CONTACT, AND A DIELECTRIC MATERIAL
Organization Name
Inventor(s)
Michael A. Lindemann of Boise ID (US)
Collin Howder of Boise ID (US)
Yoshiaki Fukuzumi of Yokohama (JP)
Richard J. Hill of Boise ID (US)
ELECTRONIC DEVICES COMPRISING A STACK STRUCTURE, A SOURCE CONTACT, AND A DIELECTRIC MATERIAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162325 titled 'ELECTRONIC DEVICES COMPRISING A STACK STRUCTURE, A SOURCE CONTACT, AND A DIELECTRIC MATERIAL
Simplified Explanation
The patent application describes electronic devices with a doped dielectric material, alternating conductive and dielectric materials, and pillars extending through the layers.
- Doped dielectric material adjacent to a source contact
- Tiers of alternating conductive and dielectric materials adjacent to the doped dielectric material
- Pillars extending through the tiers, doped dielectric material, and source contact
Potential Applications
This technology could be applied in the development of advanced electronic devices, such as transistors, sensors, and memory devices.
Problems Solved
This technology helps in improving the performance and efficiency of electronic devices by enhancing conductivity and reducing signal loss.
Benefits
The use of doped dielectric materials and alternating layers of conductive and dielectric materials can lead to faster and more reliable electronic devices with improved overall performance.
Potential Commercial Applications
- Advanced semiconductor devices
- High-speed communication systems
- Memory storage solutions
Possible Prior Art
There may be prior art related to the use of doped dielectric materials in electronic devices, as well as the integration of multiple layers of conductive and dielectric materials in semiconductor technology.
What are the specific electronic devices that can benefit from this technology?
This article does not specify the exact electronic devices that can benefit from this technology. However, potential applications mentioned include transistors, sensors, and memory devices.
How does the integration of doped dielectric materials and alternating layers of conductive and dielectric materials improve the performance of electronic devices?
The article does not provide detailed information on how exactly the integration of these materials improves performance. Further research or analysis would be needed to understand the specific mechanisms at play.
Original Abstract Submitted
electronic devices comprising a doped dielectric material adjacent to a source contact, tiers of alternating conductive materials and dielectric materials adjacent to the doped dielectric material, and pillars extending through the tiers, the doped dielectric material, and the source contact and into the source stack. related methods and electronic systems are also disclosed.
