Micron technology, inc. (20240161836). MEMORY READ VOLTAGE THRESHOLD TRACKING BASED ON MEMORY DEVICE-ORIGINATED METRICS CHARACTERIZING VOLTAGE DISTRIBUTIONS simplified abstract

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MEMORY READ VOLTAGE THRESHOLD TRACKING BASED ON MEMORY DEVICE-ORIGINATED METRICS CHARACTERIZING VOLTAGE DISTRIBUTIONS

Organization Name

micron technology, inc.

Inventor(s)

Shantilal Rayshi Doru of San Diego CA (US)

Patrick R. Khayat of San Diego CA (US)

Steven Michael Kientz of Westminster CO (US)

Sampath K. Ratnam of San Jose CA (US)

Dung Viet Nguyen of San Jose CA (US)

MEMORY READ VOLTAGE THRESHOLD TRACKING BASED ON MEMORY DEVICE-ORIGINATED METRICS CHARACTERIZING VOLTAGE DISTRIBUTIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240161836 titled 'MEMORY READ VOLTAGE THRESHOLD TRACKING BASED ON MEMORY DEVICE-ORIGINATED METRICS CHARACTERIZING VOLTAGE DISTRIBUTIONS

Simplified Explanation

The patent application describes systems and methods for memory read threshold tracking based on memory device-originated metrics characterizing voltage distributions.

  • Memory device includes a memory array with memory cells and a controller.
  • Controller receives metric values, determines voltage threshold adjustment values, and applies them for reading memory cells.

Potential Applications

This technology can be applied in:

  • Solid-state drives
  • Embedded systems
  • Data centers

Problems Solved

This technology solves issues related to:

  • Memory cell read errors
  • Voltage distribution variations
  • Data integrity in memory devices

Benefits

The benefits of this technology include:

  • Improved memory read accuracy
  • Enhanced data reliability
  • Extended memory device lifespan

Potential Commercial Applications

The potential commercial applications of this technology can be seen in:

  • Memory device manufacturing
  • Storage solutions industry
  • Semiconductor technology development

Possible Prior Art

One possible prior art for this technology could be:

  • Memory read threshold tracking based on software algorithms

Unanswered Questions

1. How does this technology impact the speed of memory read operations? 2. Are there any limitations to the number of memory cells that can be effectively tracked using this method?


Original Abstract Submitted

described are systems and methods for memory read threshold tracking based on memory device-originated metrics characterizing voltage distributions. an example memory device includes: a memory array having a plurality of memory cells and a controller coupled to the memory array. the controller is to perform operations including: receiving a first value of a metric characterizing threshold voltage distributions of a subset of a set of the plurality of memory cells; determining a first voltage threshold adjustment value; receiving a second value of the metric; determining a second voltage threshold adjustment value; and applying the second voltage threshold adjustment value for reading the set of the plurality of memory cells.