MEMORY DEVICE INCLUDING SELF-ALIGNED CONDUCTIVE CONTACTS: abstract simplified (18200852)

• This abstract for appeared for patent application number 18200852 Titled 'MEMORY DEVICE INCLUDING SELF-ALIGNED CONDUCTIVE CONTACTS'

Simplified Explanation

This abstract describes various apparatuses and methods for their formation. One of the apparatuses consists of layers of conductive and dielectric materials, memory cell strings with pillars extending through these layers, and a dielectric structure that separates the conductive and dielectric materials into two portions. The apparatus also includes first and second conductive structures connected to the memory cell strings, as well as a conductive line that contacts the dielectric structure and the conductive structures.

Original Abstract Submitted

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes levels of conductive materials interleaved with levels of dielectric materials; memory cell strings including respective pillars extending through the levels of conductive materials and the levels of dielectric materials; a dielectric structure formed in a slit, the slit extending through the levels of conductive materials and the levels of dielectric materials, the dielectric structure separating the levels of conductive materials and the levels of dielectric materials into a first portion and a second portion; first conductive structures located over and coupled to respective pillars of the first memory cell strings; second conductive structures located over and coupled to respective pillars of the second memory cell strings; and a conductive line contacting the dielectric structure, a conductive structure of the first conductive structures, and a conductive structure of the second conductive structures.