Lg display co., ltd. (20240224603). DISPLAY DEVICE simplified abstract

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DISPLAY DEVICE

Organization Name

lg display co., ltd.

Inventor(s)

Hanil Kim of Paju-si (KR)

DISPLAY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240224603 titled 'DISPLAY DEVICE

The abstract of this patent application describes a display device with improved characteristics and reliability of an oxide thin film transistor by blocking the introduction of hydrogen into the transistor of a gate-in-panel (GIP) circuit.

  • Substrate divided into active and non-active areas
  • Planarization layer covering the substrate and extending to the non-active area
  • Bank layer over the planarization layer extending to the non-active area
  • Encapsulation layer over the bank layer
  • Hydrogen absorption layer between the bank and planarization layer covering the GIP area

Potential Applications: - Display technology - Consumer electronics - Semiconductor industry

Problems Solved: - Improved characteristics and reliability of oxide thin film transistors - Prevention of hydrogen introduction into the transistor

Benefits: - Enhanced performance of display devices - Increased reliability of electronic components

Commercial Applications: Title: Enhanced Display Technology for Consumer Electronics This technology can be applied in the development of advanced display devices for consumer electronics, leading to improved performance and reliability in the semiconductor industry.

Prior Art: Readers can explore prior research on oxide thin film transistors and display technologies to understand the evolution of this innovation.

Frequently Updated Research: Stay updated on advancements in oxide thin film transistors and display technologies to leverage the latest developments in the field.

Questions about the technology: 1. How does the hydrogen absorption layer contribute to the improved reliability of the oxide thin film transistor? - The hydrogen absorption layer prevents the introduction of hydrogen into the transistor, enhancing its performance and reliability. 2. What are the key differences between traditional display devices and the display device described in this patent application? - The display device in this patent application features a unique structure with layers designed to block hydrogen and improve transistor characteristics.


Original Abstract Submitted

a display device according to an exemplary aspect of the present disclosure includes a substrate divided into an active area and a non-active area including a gate-in-panel (gip) area, a planarization layer disposed over the substrate and extending to the non-active area, a bank disposed over the planarization layer and extending to the non-active area, an encapsulation layer disposed over the bank and a hydrogen absorption layer disposed between the bank and the planarization layer to cover the gip area, so that it is possible to improve characteristics and reliability of an oxide thin film transistor by blocking introduction of hydrogen into the oxide thin film transistor of a gip circuit.