Lg display co., ltd. (20240222523). THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME simplified abstract
Contents
THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME
Organization Name
Inventor(s)
THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222523 titled 'THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME
Simplified Explanation:
The patent application describes a thin film transistor with multiple active layers and a gate electrode.
- The thin film transistor includes an active layer with a channel, a first connection portion, and a second connection portion.
- A gate electrode overlaps the channel of the active layer.
- The active layer consists of a first active layer, a second active layer on top of the first active layer in the connection portions, and a third active layer connecting the first and second active layers.
Key Features and Innovation:
- Multiple active layers in the transistor design.
- Gate electrode overlapping the channel for improved performance.
- Specific arrangement of active layers for enhanced functionality.
Potential Applications:
The technology can be used in:
- Display panels
- Integrated circuits
- Electronic devices requiring high-performance transistors
Problems Solved:
- Improved transistor efficiency
- Enhanced conductivity
- Better control over electronic signals
Benefits:
- Higher performance in electronic devices
- Increased reliability
- Improved energy efficiency
Commercial Applications:
The technology can be applied in:
- Consumer electronics
- Medical devices
- Aerospace industry
Questions about Thin Film Transistor Technology:
1. How does the multiple active layer design impact the performance of the thin film transistor? 2. What are the specific advantages of having a gate electrode overlapping the channel in the active layer design?
Original Abstract Submitted
a thin film transistor including an active layer including a channel, a first connection portion and a second connection portion contacting opposite sides of the channel; and a gate electrode overlapping the channel of the active layer. further, the active layer includes a first active layer; a second active layer on the first active layer in the first connection portion and the second connection portion of the active layer; and a third active layer contacting the first active layer in the channel and contacting the second active layer in the first connection portion and the second connection portion.
