Lg display co., ltd. (20240222518). DISPLAY DEVICE simplified abstract
Contents
DISPLAY DEVICE
Organization Name
Inventor(s)
JuHeyuck Baeck of Paju-si (KR)
ChanYong Jeong of Paju-si (KR)
DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222518 titled 'DISPLAY DEVICE
The abstract of this patent application describes a display device with a unique transistor structure that enhances reliability by utilizing different amounts of oxygen in the interface layers.
- The display device includes a substrate, gate electrodes, gate insulating films, an oxide semiconductor layer, and interface layers with varying oxygen content.
- The first and second interface layers play a crucial role in ensuring the reliability of the transistor structure.
- By controlling the oxygen content in the interface layers, the device can achieve high performance and stability.
Potential Applications:
- This technology can be applied in various types of display devices such as LCDs, OLEDs, and microLEDs.
- It can also be used in other electronic devices requiring high-performance transistors.
Problems Solved:
- Enhances the reliability and stability of transistor structures in display devices.
- Improves the overall performance of the display device.
Benefits:
- Increased reliability and stability of the transistor structure.
- Enhanced performance and longevity of the display device.
Commercial Applications:
- This technology can be utilized in the manufacturing of high-quality display devices for consumer electronics, automotive displays, and medical equipment.
Questions about the technology: 1. How does the varying oxygen content in the interface layers impact the performance of the transistor structure? 2. What are the specific advantages of using this unique transistor structure in display devices?
Original Abstract Submitted
embodiments of the present disclosure relate to a display device, which in more detail includes a substrate, a first gate electrode on the substrate, a first gate insulating film on the first gate electrode, an oxide semiconductor layer on the first gate insulating film, a second gate insulating film on the oxide semiconductor layer, a second gate electrode on the second gate insulating film, a first interface layer between the first gate insulating film and the oxide semiconductor layer, and a second interface layer between the second gate insulating film and the oxide semiconductor layer, wherein the first interface layer and the second interface layer contain mutually-different amounts of oxygen, thereby being able to provide a transistor structure having high reliability.
