Lg display co., ltd. (20240222512). Thin Film Transistor and Display Device simplified abstract
Contents
Thin Film Transistor and Display Device
Organization Name
Inventor(s)
YoungHyun Ko of Gyeongsangnam-do (KR)
ChanYong Jeong of Paju-si (KR)
JuHeyuck Baeck of Paju-si (KR)
Thin Film Transistor and Display Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222512 titled 'Thin Film Transistor and Display Device
Simplified Explanation: The patent application describes a thin film transistor with a unique structure to prevent damage to the active layer and enable the easy realization of a short channel.
- An active layer in the thin film transistor has an induced conductorized portion between a main conductorized portion and a channel area.
- The induced conductorized portion overlaps a portion of one side of a light shield layer, minimizing the risk of damage to the active layer.
- This design allows for the easy realization of a short channel in the thin film transistor.
Key Features and Innovation:
- Structure with induced conductorized portion in the active layer.
- Overlapping portion with light shield layer.
- Easy realization of a short channel.
Potential Applications: The technology can be used in various display devices, electronic screens, and other thin film transistor applications.
Problems Solved: The technology addresses the risk of damage to the active layer in thin film transistors and facilitates the creation of short channels.
Benefits:
- Improved durability of thin film transistors.
- Simplified manufacturing process.
- Enhanced performance in display devices.
Commercial Applications: The technology can be applied in the production of advanced display devices, electronic screens, and other thin film transistor-based products, potentially impacting the consumer electronics market.
Questions about Thin Film Transistors: 1. How does the induced conductorized portion in the active layer prevent damage? 2. What are the advantages of having a short channel in a thin film transistor?
Original Abstract Submitted
provided are a thin film transistor and a display device. the thin film transistor has a structure in which an active layer has an induced conductorized portion located between a main conductorized portion and a channel area, with the induced conductorized portion overlapping a portion of one side of a light shield layer. the possibility of damage to the active layer is removed or minimized. a short channel is easily realized.
