Lg display co., ltd. (20240222463). Thin Film Transistor and Display Device Including the Same simplified abstract

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Thin Film Transistor and Display Device Including the Same

Organization Name

lg display co., ltd.

Inventor(s)

DeukHo Yeon of Seoul (KR)

SunWook Ko of Seoul (KR)

KiTae Kim of Seoul (KR)

Thin Film Transistor and Display Device Including the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222463 titled 'Thin Film Transistor and Display Device Including the Same

The thin film transistor described in the patent application includes multiple layers in the gate electrodes, with the work function of the layer adjacent to the active layer being greater than the work function of the layer far from the active layer.

  • The thin film transistor includes a first buffer layer, a lower gate electrode, a second buffer layer, an active layer with source, drain, and channel regions, a gate insulating layer, and an upper gate electrode.
  • At least one of the gate electrodes consists of multiple layers, with varying work functions.
  • The innovation ensures efficient operation and control of the thin film transistor in a display device.

Potential Applications:

  • This technology can be used in various display devices such as LCDs, OLEDs, and AMOLEDs.
  • It can also be applied in electronic devices requiring high-performance thin film transistors.

Problems Solved:

  • Ensures precise control and operation of the thin film transistor.
  • Enhances the overall performance and efficiency of display devices.

Benefits:

  • Improved functionality and reliability of display devices.
  • Enhanced image quality and responsiveness in electronic displays.

Commercial Applications:

  • This technology can be utilized in the manufacturing of smartphones, tablets, TVs, and computer monitors.
  • It can also find applications in the automotive industry for display panels in vehicles.

Questions about Thin Film Transistors: 1. How does the variation in work function of the gate electrode layers impact the performance of the thin film transistor? 2. What are the specific advantages of using multiple layers in the gate electrodes of the thin film transistor?

Frequently Updated Research:

  • Stay updated on advancements in thin film transistor technology for potential improvements in display devices.


Original Abstract Submitted

disclosed is a thin film transistor and a display device including the same. the thin film transistor includes a first buffer layer; a lower gate electrode on the first buffer layer; a second buffer layer on the lower gate electrode; an active layer on the second buffer layer and including a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer on the active layer; and an upper gate electrode on the gate insulating layer. at least one of the upper gate electrode and the lower gate electrode includes a plurality of layers, and a work function of a layer adjacent to the active layer is greater than a work function of a layer far from the active layer, among the plurality of layers.