Lg display co., ltd. (20240222452). THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY APPARATUS COMPRISING THE SAME simplified abstract
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THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY APPARATUS COMPRISING THE SAME
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THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY APPARATUS COMPRISING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222452 titled 'THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY APPARATUS COMPRISING THE SAME
The abstract describes a thin film transistor substrate with an active layer, gate electrode, source electrode, and drain electrode. The gate electrode has protrusions overlapping the active layer.
- Thin film transistor substrate with active layer, gate electrode, source electrode, and drain electrode
- Gate electrode features protrusions overlapping the active layer
- Designed for improved performance and functionality in electronic devices
- Enhances conductivity and efficiency of the thin film transistor
- Potential for use in displays, sensors, and other electronic applications
Potential Applications: This technology can be applied in various electronic devices such as displays, sensors, and integrated circuits where thin film transistors are used.
Problems Solved: Enhances conductivity and efficiency of thin film transistors, improving overall performance of electronic devices.
Benefits: Improved performance and functionality in electronic devices, increased conductivity and efficiency, potential for smaller and more efficient devices.
Commercial Applications: This technology has potential commercial applications in the electronics industry, specifically in the development of displays, sensors, and integrated circuits.
Questions about Thin Film Transistor Substrate: 1. How does the gate electrode with protrusions enhance the performance of the thin film transistor substrate? 2. What are the specific advantages of using this technology in electronic devices?
Frequently Updated Research: Stay updated on the latest advancements in thin film transistor technology to ensure optimal performance and functionality in electronic devices.
Original Abstract Submitted
a thin film transistor substrate includes a substrate; an active layer on the substrate; a gate electrode on the active layer; a source electrode connected to a first side of the active layer, and a drain electrode connected to a second side of the active layer. the gate electrode includes a body portion and at least one first protrusion on a first side of the body part with the at least one first protrusion overlapping the active layer in a plan view.
