Lg display co., ltd. (20240222380). THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS USING THE SAME simplified abstract
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS USING THE SAME
Organization Name
Inventor(s)
JuHeyuck Baeck of Gyeonggi-do (KR)
Dohyung Lee of Gyeonggi-do (KR)
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222380 titled 'THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS USING THE SAME
The patent application describes a thin film transistor substrate with a unique structure involving two active layers, a gate electrode, and a gate insulating film.
- The substrate contains a gate electrode and two active layers, with the first active layer closer to the gate electrode than the second active layer.
- A gate insulating film is positioned between the first active layer and the gate electrode, with both layers in contact.
- The first active layer consists of a crystalline oxide semiconductor material, while the second active layer comprises an amorphous oxide semiconductor material.
Potential Applications: - This technology could be used in the manufacturing of high-performance display screens for electronic devices. - It may find applications in the development of advanced sensors and imaging devices.
Problems Solved: - The technology addresses the need for improved performance and efficiency in thin film transistor substrates. - It offers a solution for enhancing the overall quality and functionality of electronic displays.
Benefits: - Enhanced performance and efficiency in electronic devices. - Improved image quality and responsiveness in display screens.
Commercial Applications: - The technology could be utilized in the production of smartphones, tablets, and other electronic devices with high-resolution displays. - It may also have applications in the development of medical imaging equipment and industrial monitoring systems.
Questions about Thin Film Transistor Substrate: 1. How does the structure of the thin film transistor substrate contribute to its performance? 2. What are the advantages of using both crystalline and amorphous oxide semiconductor materials in the active layers?
Frequently Updated Research: - Stay updated on the latest advancements in thin film transistor technology to understand how this innovation may evolve in the future.
Original Abstract Submitted
a thin film transistor substrate includes a substrate; and a gate electrode and an active layer spaced up and down on the substrate, wherein the active layer includes a first active layer and a second active layer, the first active layer is disposed closer to the gate electrode than the second active layer, a gate insulating film is additionally disposed between the first active layer and the gate electrode, the first active layer and the gate insulating film are in contact with each other, and, the first active layer includes a crystalline oxide semiconductor material, and the second active layer includes an amorphous oxide semiconductor material.
