Lg display co., ltd. (20240213369). Transistor, Fabrication Method Thereof, and Display Apparatus Comprising the Same simplified abstract
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Transistor, Fabrication Method Thereof, and Display Apparatus Comprising the Same
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Transistor, Fabrication Method Thereof, and Display Apparatus Comprising the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213369 titled 'Transistor, Fabrication Method Thereof, and Display Apparatus Comprising the Same
Simplified Explanation: This patent application describes a transistor with a nanorod structure, a method for fabricating the transistor, and a display apparatus incorporating the transistor. The transistor includes a first electrode, a nanorod on the first electrode, an active layer on the nanorod, a gate insulating layer, a gate electrode, and a second electrode connected to the active layer.
- The transistor features a nanorod structure on the first electrode.
- The nanorod has a larger height than diameter, with the active layer on its side surface.
- The gate insulating layer and gate electrode are positioned on top of the active layer.
- The second electrode is spaced apart from the first electrode and connected to the active layer.
Key Features and Innovation:
- Nanorod structure for improved transistor performance.
- Active layer positioned on the nanorod for enhanced functionality.
- Unique design with first electrode, gate insulating layer, gate electrode, and second electrode.
Potential Applications:
- Advanced display technology.
- High-performance electronic devices.
- Nanotechnology research and development.
Problems Solved:
- Enhancing transistor efficiency and performance.
- Improving display quality and functionality.
- Advancing nanoscale electronics.
Benefits:
- Increased transistor reliability.
- Enhanced display resolution.
- Potential for smaller and more efficient electronic devices.
Commercial Applications: Commercial Applications: Nanorod transistors could revolutionize the display industry by offering higher resolution and improved performance in electronic devices. This technology has the potential to be utilized in smartphones, tablets, televisions, and other display devices, enhancing user experience and driving innovation in the electronics market.
Questions about Nanorod Transistors: 1. How do nanorod transistors compare to traditional transistor designs in terms of performance and efficiency? 2. What are the potential challenges in mass-producing nanorod transistors for commercial applications?
Original Abstract Submitted
a transistor, a fabricating method of the transistor, and a display apparatus comprising the transistor are provided. the transistor comprises a first electrode, nanorod on the first electrode, an active layer on the nanorod, a gate insulating layer on the active layer, a gate electrode on the active layer, and a second electrode connected to the active layer and disposed spaced apart from the first electrode, the first electrode has a pattern area, the nanorod is disposed on the pattern area, the nanorod has a diameter and height, the height of the nanorod is larger than the diameter of the nanorod, the active layer is disposed on a side surface of the nanorod, and connected to the first electrode.
