Lg display co., ltd. (20240204076). Thin Film Transistor, Fabrication Method Thereof, and Display Apparatus Comprising the Same simplified abstract
Contents
Thin Film Transistor, Fabrication Method Thereof, and Display Apparatus Comprising the Same
Organization Name
Inventor(s)
SeungChan Choi of Paju-si (KR)
Thin Film Transistor, Fabrication Method Thereof, and Display Apparatus Comprising the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204076 titled 'Thin Film Transistor, Fabrication Method Thereof, and Display Apparatus Comprising the Same
Simplified Explanation: The patent application describes a thin film transistor with an oxide semiconductor layer, a channel protection layer containing carbon, and a gate electrode on a base substrate for use in display apparatus.
- The thin film transistor includes an oxide semiconductor layer on a base substrate.
- A channel protection layer with carbon is in contact with the oxide semiconductor layer.
- The gate electrode is spaced apart from the oxide semiconductor layer and partially overlaps it.
Key Features and Innovation:
- Thin film transistor design with an oxide semiconductor layer and carbon-containing channel protection layer.
- Gate electrode configuration for improved performance in display applications.
Potential Applications: The technology can be used in various display devices such as TVs, monitors, and smartphones.
Problems Solved:
- Enhanced performance and reliability of thin film transistors in display applications.
- Protection of the oxide semiconductor layer with the carbon-containing channel protection layer.
Benefits:
- Improved display quality and efficiency.
- Increased durability and longevity of display devices.
Commercial Applications: Potential commercial applications include consumer electronics, digital signage, and automotive displays.
Prior Art: Prior research on thin film transistors, oxide semiconductors, and carbon-based materials in electronic devices can provide insights into related technologies.
Frequently Updated Research: Stay updated on advancements in oxide semiconductor technology, thin film transistor fabrication methods, and carbon-based materials for electronic applications.
Questions about Thin Film Transistors: 1. What are the key components of a thin film transistor? 2. How does the use of an oxide semiconductor layer improve display performance?
Original Abstract Submitted
the thin film transistor, fabrication method thereof, and display apparatus comprising the same are provided. the thin film transistor comprises a base substrate, an oxide semiconductor layer on the base substrate, a channel protection layer in contact with the oxide semiconductor layer, and a gate electrode spaced apart from the oxide semiconductor layer and at least partially overlapped with the oxide semiconductor layer, and the channel protection layer includes carbon.
