Lg display co., ltd. (20240178345). LIGHT-EMITTING DEVICE, DISPLAY APPARATUS INCLUDING THE SAME AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
- 1 LIGHT-EMITTING DEVICE, DISPLAY APPARATUS INCLUDING THE SAME AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LIGHT-EMITTING DEVICE, DISPLAY APPARATUS INCLUDING THE SAME AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does the protrusion in the first semiconductor layer affect the overall performance of the light-emitting device?
- 1.9.3 What specific materials are used in the passivation pattern and how do they contribute to the protection and performance of the nitride semiconductor structure?
- 1.10 Original Abstract Submitted
LIGHT-EMITTING DEVICE, DISPLAY APPARATUS INCLUDING THE SAME AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
LIGHT-EMITTING DEVICE, DISPLAY APPARATUS INCLUDING THE SAME AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178345 titled 'LIGHT-EMITTING DEVICE, DISPLAY APPARATUS INCLUDING THE SAME AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The display apparatus described in the patent application includes a package substrate with circuit elements and a light-emitting device with a nitride semiconductor structure and a passivation pattern. The first semiconductor layer of the nitride semiconductor structure includes a protrusion that is disposed in the holder area of the package substrate.
- Nitride semiconductor structure with first semiconductor layer, active layer, and second semiconductor layer
- Passivation pattern on outer surface of nitride semiconductor structure
- Protrusion in first semiconductor layer protruding away from active layer and disposed in holder area
Potential Applications
The technology described in this patent application could be applied in:
- Display screens
- Lighting applications
- Signage
Problems Solved
This technology helps in:
- Improving display quality
- Enhancing light emission efficiency
- Increasing durability of the light-emitting device
Benefits
The benefits of this technology include:
- Brighter and more vibrant displays
- Longer lifespan of the light-emitting device
- Reduced power consumption
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Automotive lighting
- Outdoor advertising displays
Possible Prior Art
One possible prior art could be the use of passivation patterns in semiconductor devices to improve performance and reliability. Another could be the integration of protrusions in semiconductor layers for specific functionalities.
Unanswered Questions
How does the protrusion in the first semiconductor layer affect the overall performance of the light-emitting device?
The protrusion in the first semiconductor layer could potentially impact the light emission characteristics and efficiency of the device. Further research and testing would be needed to fully understand the effects of this design element.
What specific materials are used in the passivation pattern and how do they contribute to the protection and performance of the nitride semiconductor structure?
The materials used in the passivation pattern play a crucial role in protecting the nitride semiconductor structure from environmental factors and ensuring its long-term functionality. Understanding the composition and properties of these materials would provide valuable insights into the technology's effectiveness.
Original Abstract Submitted
a display apparatus includes a package substrate in which a plurality of circuit elements are disposed, wherein the package substrate includes a holder area; and a light-emitting device, wherein the light-emitting device includes: a nitride semiconductor structure including a first semiconductor layer, an active layer, and a second semiconductor layer disposed sequentially; and a passivation pattern disposed on an outer surface of the nitride semiconductor structure, wherein the first semiconductor layer includes a protrusion, the protrusion protrudes in a direction away from the active layer, wherein the protrusion is disposed in the holder area.
