Kioxia corporation (20240324470). MAGNETIC MEMORY DEVICE simplified abstract
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324470 titled 'MAGNETIC MEMORY DEVICE
The patent application describes a magnetic memory device with specific structural components and materials.
- Lower structure with a bottom electrode made of a conductive material
- Top electrode positioned above the bottom electrode
- Magnetoresistance effect element between the bottom electrode and the top electrode
- Oxide insulating layer composed of an oxide of the conductive material, with portions on the side surfaces of the bottom electrode and the magnetoresistance effect element
This innovation aims to improve the performance and efficiency of magnetic memory devices by utilizing specific materials and structural configurations.
Potential Applications: - Data storage devices - Computer memory systems - Magnetic sensors
Problems Solved: - Enhancing data storage capacity - Improving data transfer speeds - Increasing device reliability
Benefits: - Higher performance levels - Enhanced data security - Longer lifespan of memory devices
Commercial Applications: Title: Advanced Magnetic Memory Devices for Enhanced Data Storage This technology can be utilized in the development of next-generation data storage devices, leading to faster and more reliable memory systems. The market implications include increased demand for high-performance memory solutions in various industries.
Prior Art: Researchers can explore prior patents related to magnetic memory devices, conductive materials, and oxide insulating layers to understand the existing knowledge in this field.
Frequently Updated Research: Stay updated on advancements in magnetoresistance effect elements, conductive materials, and oxide insulating layers to incorporate the latest innovations into magnetic memory device design.
Questions about Magnetic Memory Devices: 1. How do magnetic memory devices differ from traditional storage solutions? Magnetic memory devices utilize magnetoresistance effect elements to store data, offering faster access times and higher storage capacities compared to traditional storage methods.
2. What are the key advantages of using oxide insulating layers in magnetic memory devices? Oxide insulating layers provide enhanced insulation between components, reducing interference and improving the overall performance and reliability of the device.
Original Abstract Submitted
according to one embodiment, a magnetic memory device includes a lower structure, a bottom electrode provided on the lower structure and formed of a conductive material, a top electrode provided above the bottom electrode, a magnetoresistance effect element provided between the bottom electrode and the top electrode, and an oxide insulating layer including a first portion provided on a side surface of the bottom electrode and a second portion provided on a side surface of the magnetoresistance effect element, and formed of an oxide of the conductive material.
