Kioxia corporation (20240324242). MEMORY DEVICE simplified abstract
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Toshihiko Nagase of Seoul (KR)
Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324242 titled 'MEMORY DEVICE
The memory device described in the abstract includes a first wiring line, a second wiring line, and a memory cell with specific components.
- The first wiring line extends along a first direction.
- The second wiring line is on an upper layer side of the first wiring line and extends along a second direction intersecting the first direction.
- The memory cell is positioned between the first and second wiring lines and contains a magnetoresistance effect element, a switching element, a middle electrode, and a resistive layer.
Key Features and Innovation:
- Memory device with a unique structure for improved performance.
- Utilizes magnetoresistance effect element and switching element for data storage.
- Middle electrode and resistive layer enhance functionality and efficiency.
Potential Applications:
- Data storage devices.
- Computer memory systems.
- Electronic devices requiring non-volatile memory.
Problems Solved:
- Enhanced data storage capabilities.
- Improved efficiency and reliability of memory devices.
Benefits:
- Faster data access and retrieval.
- Increased data storage capacity.
- Enhanced overall performance of electronic devices.
Commercial Applications: Memory devices with this innovative structure can be used in various electronic products, including smartphones, laptops, and servers, to improve data storage and processing capabilities.
Questions about Memory Devices with Magnetoresistance Effect Element: 1. How does the resistive layer impact the performance of the memory device? 2. What are the potential limitations of using magnetoresistance effect elements in memory technology?
Frequently Updated Research: Stay updated on the latest advancements in memory technology, particularly in the development of magnetoresistance effect elements for memory devices.
Original Abstract Submitted
according to one embodiment, a memory device includes a first wiring line extending along a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending along a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line, and including a magnetoresistance effect element, a switching element, a middle electrode provided between the magnetoresistance effect element and the switching element, and a resistive layer provided between the magnetoresistance effect element and the second wiring line. a resistance of the resistive layer is higher than a resistance of the middle electrode.
